| Allicdata Part #: | BSC021N08NS5ATMA1-ND |
| Manufacturer Part#: |
BSC021N08NS5ATMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | N-Channel 80 V 226A (Tc) 214W (Tc) Surface Mount P... |
| More Detail: | N/A |
| DataSheet: | BSC021N08NS5ATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | OptiMOS™ 5 |
| Packaging: | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| Part Status: | Active |
| Transistor Type: | 1 N-Channel |
| Frequency: | -- |
| Gain: | -- |
| Voltage - Test: | -- |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | -- |
| Power - Output: | -- |
| Voltage - Rated: | -- |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PG-TSON-8-3 |
| Base Part Number: | BSC021 |
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Full model: BSC021N08NS5ATMA1
Manufacturer: Infineon
Device type: OptiMOS™ Power MOSFET (N-channel)
Package: PG-TDSON-8 (PowerDSO-8 with solderable backside heat sink)
Operating temperature: -55°C ~ +175°C (junction temperature range)
Compliance standards: RoHS, AEC-Q101 (automotive grade qualification)
Drain-source voltage (V<sub>DS</sub>): 80V
Continuous drain current (I<sub>D</sub>): 120A (@25°C) / 70A (@100°C)
On-resistance (R<sub>DS(on)</sub>): 2.1mΩ (typical, @V<sub>GS</sub>=10V)
Gate charge (Q<sub>g</sub>): 48nC (@V<sub>GS</sub>=10V)
Switching loss: E<sub>on</sub>=0.45mJ, E<sub>off</sub>=0.25mJ (test conditions: V<sub>DD</sub>=40V, I<sub>D</sub>=60A)
Body diode characteristics: Reverse recovery time (t<sub>rr</sub>) = 85ns
Features
1. Optimized for synchronous rectification in server and desktop100%
2. avalanche tested
3. Superior thermal resistance
4. N-channel
5. 175°C rated
6. Pb-free lead plating; RoHS compliant
7. Halogen-free according tolEC61249-2-21
Pin Definition (PG-TDSON-8 package)
| Pin No. | Name | Function Description |
| 1,2,5,6 | G | Gate (need series resistor to suppress ringing) |
| 3,4,7,8 | D | Drain (high current path) |
| Backside pad | S | Source (must be soldered to a large area of copper foil for heat dissipation) |
Typical Application Circuit
1. 48V Motor Drive Half-Bridge Design
High-side MOSFET (BSC021N08NS5ATMA1):
D ────┬─── 48V power supply
│
G ────┴─── PWM drive signal (such as IR2104 driver)
S ──────── Motor phase line
Low-side MOSFET (same model):
D ──────── Motor phase line
G ──────── PWM drive signal
S ──────── GND
2. Key components:
- Gate drive resistor: 10Ω (close to MOSFET gate).
- Bootstrap capacitor: 100nF (high-side drive power supply).
Thermal management design
1. PCB layout requirements:
- The backside heat sink pad needs to be connected to a copper foil area of at least 4cm² and filled with multiple heat dissipation vias (diameter ≥ 0.3mm).
- High current trace width ≥ 5mm (1oz copper thickness, additional tinning is required to carry 70A).
2. Heat dissipation calculation example:
- Power consumption P = I²×R = (70A)²×0.0021Ω = 10.3W → Temperature rise ΔT = P×R<sub>thJA</sub> = 10.3W×1.5K/W ≈ 15.5K.
The specific data is subject to PDF, and the above content is for reference
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BSC021N08NS5ATMA1 Datasheet/PDF