BSP33,115

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BSP33,115 Application Field and Working Principle

The BSP33,115, an NPN silicon planar epitaxial transistor, is a member of the popular bipolar junction transistor (BJT) family and falls under the single type category, offering designers a large selection of components for switching and amplification applications. It features high current gain, low collector–emitter saturation voltage, and low noise figure for superior performance and reliability and is commonly used in wide range of consumer and industrial applications.

Product Areas of Use

The low cost BSP33, 115 is particularly suitable for use in consumer electronics and appliances. Such devices include consumer audio amplifiers and receivers, radio, telephones, power meters, control circuits, recording equipment, and industrial switching applications, among others. It can also be used in non consumer applications like power regulators, line current sources, current and voltage conversion, AC/DC inverters, DC/DC converters, and in sensing circuits where switching is essential.

Electrical Characteristics

The BSP33, 115 offers a wide range of electrical characteristics designed to meet various requirements. Its maximum current carrying capability is 1.2 A at a collector–emitter voltage of 5 V.Breakdown voltage, reverse leakage current, and hFE are the major characteristics that must be considered when selecting the device for an application. Low voltage and high voltage devices are available depending on the required breakdown voltage. Other characteristics include transition frequency, collector–base capacitance, phase delay and transition time.

Basic Working Principle

Like all other bipolar transistors, the BSP33,115 is a three terminal active device. The three terminals are commonly referred to as the emitter, base and collector and the flow of current is between emitter and collector terminals with the base terminal acting as a control gate. In the on mode of operation (saturation mode) the current flowing in the device is controlled by the flow of minority carriers in the base terminal. This flow is controlled by the base–emitter voltage, which is the difference between the forward biased base terminal and the reverse biased emitter terminal. The collector current–base voltage characteristics in a typical semiconductor bipolar transistor is shown in Figure 1.

The main advantage of using a bipolar transistor is its relatively fast switching speed and its capability to handle high current levels. The BSP33,115 also has an additional advantage of an extremely high open collector current rating. It is designed to use as an electronic switch that can handle high current levels in both AC and DC applications.

Conclusion

The BSP33, 115 is an NPN silicon planar epitaxial transistor. It is an economical solution for use in consumer electronics, audio amplifiers and receivers, radio, telephones, switch activation, power meters, control circuits, recording equipment, and industrial switching applications. It has a wide range of electrical characteristics, a high open collector current rating for both AC and DC applications, and is suitable for low voltage as well as high voltage applications. The main advantages of using the BSP33,115 are its fast switching speed, its capability to handle large current levels, and its low cost.

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