Allicdata Part #: | BSP372NH6327XTSA1TR-ND |
Manufacturer Part#: |
BSP372NH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 1.7A SOT-223 |
More Detail: | N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount P... |
DataSheet: | BSP372NH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.8V @ 218µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 329pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14.3nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 230 mOhm @ 1.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSP372NH6327XTSA1 is one type of Field Effect Transistor (FET) commonly found in electronic devices for a variety of purposes. In particular, it tends to be used in switching and amplification circuitry, areas which require the FET’s conductive properties when specific voltages are applied. These transistors allow current to flow in one direction only, meaning that either a positive or a negative voltage can be obtained from this transistor to achieve the desired switching effect. And it works under certain conditions. It begins to work when the voltage applied to the gate terminal which makes the transmission effect occurs and it will break down the connection when the voltage between the source terminal and the ground is larger than the voltage between the source terminal and the drain terminal.
The BSP372NH6327XTSA1 is a type of transistor known as a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). This means that it uses a metal oxide layer as the active layer between the source and drain terminals. This oxide layer acts as an insulator, meaning that it prevents current from flowing between the source and drain terminals. This property allows the BSP372NH6327XTSA1 to work as a switch or an amplifier, allowing for controlled output signals of either a positive or a negative voltage.
Generally speaking, the BSP372NH6327XTSA1 application field includes all kinds of circuits which need to be switched according to certain conditions, like power supply and audio amplifier. Furthermore, it is suitable for program controlled, velocity controlled, and voltage controlled switching circuitry. To be more specific, this kind of transistor is often used for low-frequency, intermittent switching applications, such as in digital logic or in mechanical switch systems. It can also be used for linear applications in the power supply circuits, precision signals, and AC waves.
In brief, the BSP372NH6327XTSA1 is an efficient and versatile metal oxide semiconductor FET. Its application fields range across various switching, amplifying, and power supply fields since its operation only requires passing a specific voltage to the gate terminal. And its features in terms of affordability and size give it a leg up when compared to other variants of FETs, making it a popular choice for those seeking an efficient and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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