BSP372NH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSP372NH6327XTSA1TR-ND

Manufacturer Part#:

BSP372NH6327XTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 1.7A SOT-223
More Detail: N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount P...
DataSheet: BSP372NH6327XTSA1 datasheetBSP372NH6327XTSA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 329pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSP372NH6327XTSA1 is one type of Field Effect Transistor (FET) commonly found in electronic devices for a variety of purposes. In particular, it tends to be used in switching and amplification circuitry, areas which require the FET’s conductive properties when specific voltages are applied. These transistors allow current to flow in one direction only, meaning that either a positive or a negative voltage can be obtained from this transistor to achieve the desired switching effect. And it works under certain conditions. It begins to work when the voltage applied to the gate terminal which makes the transmission effect occurs and it will break down the connection when the voltage between the source terminal and the ground is larger than the voltage between the source terminal and the drain terminal.

The BSP372NH6327XTSA1 is a type of transistor known as a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). This means that it uses a metal oxide layer as the active layer between the source and drain terminals. This oxide layer acts as an insulator, meaning that it prevents current from flowing between the source and drain terminals. This property allows the BSP372NH6327XTSA1 to work as a switch or an amplifier, allowing for controlled output signals of either a positive or a negative voltage.

Generally speaking, the BSP372NH6327XTSA1 application field includes all kinds of circuits which need to be switched according to certain conditions, like power supply and audio amplifier. Furthermore, it is suitable for program controlled, velocity controlled, and voltage controlled switching circuitry. To be more specific, this kind of transistor is often used for low-frequency, intermittent switching applications, such as in digital logic or in mechanical switch systems. It can also be used for linear applications in the power supply circuits, precision signals, and AC waves.

In brief, the BSP372NH6327XTSA1 is an efficient and versatile metal oxide semiconductor FET. Its application fields range across various switching, amplifying, and power supply fields since its operation only requires passing a specific voltage to the gate terminal. And its features in terms of affordability and size give it a leg up when compared to other variants of FETs, making it a popular choice for those seeking an efficient and cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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