Allicdata Part #: | BSP300H6327XUSA1TR-ND |
Manufacturer Part#: |
BSP300H6327XUSA1 |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 190MA SOT-223 |
More Detail: | N-Channel 800V 190mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP300H6327XUSA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.38036 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
Vgs (Max): | ±20V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 190mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 190mA (Ta) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSP300H6327XUSA1 transistor is a static MOSFET that is used in both digital and analog circuits. It’s primarily used as a switch and can be used in a number of useful applications. It is a popular choice due to its low on-resistance, low gate drive power and high speed switching capabilities.
The BSP300H6327XUSA1 is a single-component, three-terminal MOSFET consisting of a source (S), drain (D), and gate (G) electrodes. The source is the input of the device, and the drain is the output. The gate is used to control the current flow between the source and drain. When a voltage is applied to the gate, it will create an electrostatic field that pulls electrons from the source and deposits them into the drain.
When the gate voltage is low, the MOSFET will be in cutoff mode. In this state, the resistance between the source and the drain is very high, and no current can flow. When a higher gate voltage is applied, the resistance between the source and the drain will be less, allowing current to flow between the two points.
The BSP300H6327XUSA1 can be used in applications where digital switching is needed, such as switching of an audio amplifier from soft-on to full-on. It can also be used in applications where an analog signal needs to be converted to digital, or the other way around. Additionally, it can be used in motor controllers, power supplies, and power management in automotive electronics.
The BSP300H6327XUSA1 has two ratings; drain-source voltage (VDS) and drain-source current (ID). The higher the drain-source voltage and current ratings, the more powerful the transistor. The maximum power that the transistor is capable of handling is determined by the maximum drain-source voltage (VDS) and drain-source current (ID).
The switching speed of this device is very fast, with a turn-on delay time (TD) of 4 nsec and a reverse recovery time (trr) of just 25 nsec. The reverse recovery time can be further improved by increasing the gate voltage above the threshold voltage (Vth) during the off state. This will cause the electrons to be rapidly discharged from the drain and minimize reverse recovery time.
The BSP300H6327XUSA1 is extremely reliable and can last for millions of on/off cycles. Its low on-resistance and low gate drive power means it is more energy efficient than other MOSFETs, saving on power consumption and increasing system reliability.
The BSP300H6327XUSA1 transistor is an ideal choice for a broad range of digital and analog switching applications. Its low on-resistance, low gate drive power, high speed switching and reliability make it perfect for use in a wide variety of systems. Whether you need digital or analog switching, the BSP300H6327XUSA1 is the MOSFET for the job.
The specific data is subject to PDF, and the above content is for reference
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