BSP322PL6327HTSA1

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BSP322PL6327HTSA1 belongs to the family of transistors - FETs, MOSFETs – single. It has a number of useful applications in modern electronics, which require low on-state resistance. This transistor has a high current capacity of 1.2A and is suitable for applications such as DC/DC converters, mobile phone power, PC notebook power and other applications needing high output current.

The device features a built-in power MOSFET along with an integrated Passive Miller Compensation Circuit which allows for zero temperature coefficient of on-state resistance. The device is designed to achieve low RDS(on) with a gate charge (Qg) of 15nC. It also has a number of other features such as low input capacitance and high power dissipation that make it suitable for high-efficiency applications.

BSP322PL6327HTSA1 is designed to operate under an applied drain-source voltage not exceeding 60V and an ambient temperature range of -40°C to 125°C. It is also rated with a maximum power dissipation of 500mW, making it suitable for high-efficiency applications in various electronic systems.

The operating principle of this transistor is based on the use of P and N type MOSFETs. In the device, a P-channel MOSFET acts as the controlling element, which can switch the drain-source voltage between high and low states. The amount of current flow through the device is determined by the amount of voltage dropped by the P-channel MOSFET and controlled by the gate voltage. The device also features an integrated Passive Miller Compensation Circuit to ensure zero temperature coefficient of on-state resistance.

The combination of low on-state resistance, high current capacity and the ability to switch the drain-source voltage between high and low states makes this transistor very suitable for a wide range of applications such as DC/DC converters, mobile phone power, PC notebook power, battery chargers and automotive applications among others.

BSP322PL6327HTSA1 is a highly reliable transistor, with a wide range of useful applications. Its low RDS(ON) and high thermal dissipation attributes make it suitable for high-efficiency applications. The built-in Passive Miller Compensation Circuit ensures zero temperature coefficient of on-state resistance, thus ensuring reliable performance in a wide range of operating conditions. This transistor has proven to be an ideal solution for a variety of electronic applications.

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