Allicdata Part #: | BSP320SE6433-ND |
Manufacturer Part#: |
BSP320S E6433 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 2.9A SOT-223 |
More Detail: | N-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG... |
DataSheet: | BSP320S E6433 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 20µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The BSP320S E6433 is a single polarity MOSFET transistor, abbreviated by Small-Signal MOSFET. It is a low threshold voltage power MOSFET with advanced manufacturing process, obtained by international leading technology. The BSP320S E6433 features excellent performance with the following features: high breakdown voltage, high drain-source voltage, low on-resistance and low gate threshold voltage.
The applications of BSP320S E6433 come from various industries, such as amplified audio circuits, active filters, power supplies, DC/DC converters, audio processors, and power amplifiers. For example, the source-gate voltage ratio of BSP320S can be controlled to ensure linear and low distortion operation over a wide power range. In addition, the MOSFET\'s high current drain capability and tight parameter tolerance can handle high power wattage applications, making it widely used in high power audio and industrial applications.
The working principle of BSP320S E6433 is that the electric charge carriers, electrons and holes, "fill" and "empty" the MOSFET\'s gates or channels. The current flow through the MOSFETs is therefore proportional to the gate-source voltage and inversely proportional to the size of the gate oxide: the larger the oxide, the less current will flow. This is different from the working principle of electric transistors, since the N and P regions are connected in parallel, electric current flow is controlled directly by the electric field.
In addition, BSP320S E6433 also has a “body effect”. When the drain-source current increases, the threshold voltage will increase due to the added current-induced channel length modulation and mobility reduction, hence channel conductance will decrease. This "body effect" is typically accounted for when designing circuits with MOSFETs.
The BSP320S E6433 is a very versatile transistor, with great advantages for all types of applications. It has high voltage, high drain-source voltage, low on-resistance, low gate threshold voltage and tight parameter tolerance. Its body effect also has a great impact on the design of all kinds of circuits with MOSFETs. Therefore, it is widely used in numerous industries for amplified audio circuits, active filters, power supplies, DC/DC converters, audio processors, and power amplifiers.
The specific data is subject to PDF, and the above content is for reference
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