Allicdata Part #: | BSP318SE6327-ND |
Manufacturer Part#: |
BSP318S E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 2.6A SOT-223 |
More Detail: | N-Channel 60V 2.6A (Ta) 1.8W (Ta) Surface Mount PG... |
DataSheet: | BSP318S E6327 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSP318S E6327 is an advanced N-channel enhancement mode MOSFET with ultra-stable temperature performance and high-speed single pulse switching performance over temperature. It is designed for the latest next-generation automotive motor drive applications. This MOSFET is mainly used for 120V/30A automotive high-voltage switching applications. It can also be used for DC-DC converters, motor drivers, and other electronic systems with high-speed switching, fast switching and excellent temperature stability.
The Model BSP318S E6327 is a single high-speed, high-voltage MOSFET that offers superior performance in a wide range of applications. It features an integrated source incorporated directly into the chip, which eliminates the need for an external source lead and eliminates the need for an external feedback resistor. This source is extremely fast, offering up to 2.5µs drive and 2.5µs off time.
The MOSFET works on the principle of enhancement type MOSFET, which is controlled by the gate voltage. The gate voltage controls the flow of the current and voltage from the power source to the load. When the gate voltage increases, the current flow increases and when the gate voltage decreases, the current flow decreases. This type of control enables the MOSFET to operate efficiently and effectively with minimal losses.
The Model BSP318S E6327 offers fast switching for high-voltage applications. It is an ideal solution for applications such as high-voltage motor drive, DC-DC converters, and power electronic systems. The high-speed switching of the MOSFET ensures accurate and fast switching, offering a low-power, fast response, high-voltage solution. The wide-ranging temperature stability of the MOSFET offers good thermal performance over extended temperature ranges.
The Model BSP318S E6327 features low on-resistance, which helps reduce conduction losses in the power stage. Low on-resistance also enables fast switching speeds and helps reduce switching losses. This MOSFET uses a high-efficiency sidewall contact structure, which helps reduce the junction capacitance of the power switching element and helps reduce switching losses.
The Model BSP318S E6327 is designed for the automotive motor drive applications. It helps in the implementation of high-power and high-voltage motor drives. The high-speed switching capabilities help to reduce switching times for maximum efficiency. Also, the fast switching characteristics help to reduce overall system power losses, resulting in superior performance and lower maintenance costs.
The Model BSP318S E6327 is designed with advanced protection mechanisms to help protect the MOSFET from thermal over stress and ESD over voltage. It is integrated with a temperature-dependent circuit breaker, which prevents excess current from flowing through the device and helps to protect it from thermal damage. The low gate turn-on voltage helps to reduce EMI and improves system noise immunity.
In summary, the Model BSP318S E6327 is a high-speed, high-voltage MOSFET, which is designed for automotive motor drive applications. It features low on-resistance and wide temperature stability, which helps reduce conduction losses and switching losses. Its high-efficiency sidewall contact structure ensures a low junction capacitance, to reduce switching losses. Its advanced protection mechanisms help to protect the MOSFET from thermal over stress and ESD-related overvoltage.
The specific data is subject to PDF, and the above content is for reference
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