| Allicdata Part #: | BSP322PH6327XTSA1TR-ND |
| Manufacturer Part#: |
BSP322PH6327XTSA1 |
| Price: | $ 0.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 100V 1A SOT-223 |
| More Detail: | P-Channel 100V 1A (Tc) 1.8W (Ta) Surface Mount PG-... |
| DataSheet: | BSP322PH6327XTSA1 Datasheet/PDF |
| Quantity: | 5000 |
| 1 +: | $ 0.16000 |
| 10 +: | $ 0.15520 |
| 100 +: | $ 0.15200 |
| 1000 +: | $ 0.14880 |
| 10000 +: | $ 0.14400 |
| Vgs(th) (Max) @ Id: | 1V @ 380µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | PG-SOT223-4 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 372pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16.5nC @ 10V |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BSP322PH6327XTSA1 is a MOSFET product from the Toshiba lineup of discrete semiconductor components. MOSFET stands for Metal Oxide Semiconductor Field-Effect Transistor, which is a type of transistor that uses an electric field to control the flow of current between its three terminals (gate, source, and drain). Because of its wide range of operating characteristics, the BSP322PH6327XTSA1 can be used in a variety of application scenarios.
Application Field
The BSP322PH6327XTSA1 is mostly used in power switching applications, such as the control of electric motors or component supplies. At a rating of 20V, this device can handle a maximum load current of 17A and a maximum load power of 170W. As such, it is suitable for use as a switching device in applications such as converters, inverters, motor control circuits, and automotive power supplies. The built-in EMI filter makes it a good choice for noise-sensitive applications. The BSP322PH6327XTSA1 also has a short channel length of 6 to 8 microns, which is ideal for applications with high switching speeds.
Working Principle
The BSP322PH6327XTSA1 operates in the same way as a conventional MOSFET. A high voltage input signal, applied to the gate, creates an electric field between the gate, source and drain. This electric field attracts and repels free electrons from the source area, creating a conductive channel between the source and drain. Applying a low voltage input signal to the gate switches off the field and the channel, turning off the flow of current between the source and drain. The BSP322PH6327XTSA1 also features a body diode to help regulate the current flow in both directions.
Conclusion
The BSP322PH6327XTSA1 is a high performance MOSFET from Toshiba, with applications in power switching, converters, inverters, motor control circuits and automotive power supplies. With its short channel length and built-in EMI filter, it can handle high switching speeds, making it ideal for noise-sensitive applications. In addition, its body diode helps regulate the current flow in both directions. All of these features make the BSP322PH6327XTSA1 a versatile and reliable switching device.
The specific data is subject to PDF, and the above content is for reference
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BSP322PH6327XTSA1 Datasheet/PDF