BSP315PE6327T Discrete Semiconductor Products |
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Allicdata Part #: | BSP315PXTINTR-ND |
Manufacturer Part#: |
BSP315PE6327T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 1.17A SOT-223 |
More Detail: | P-Channel 60V 1.17A (Ta) 1.8W (Ta) Surface Mount P... |
DataSheet: | BSP315PE6327T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 160µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 160pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 1.17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.17A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSP315PE6327T are logic level field-effect transistors (FETs) specifically made to operate on low voltage and low consumption. The BSP315PE6327T is completely enhanced P-channel MOSFETs genealogy that has been specifically designed to fit into low voltage, low consumption and space-saving solutions. This specific MOSFET is the first choice when it comes to the power supply of memory modules or other applications, where a wide range of input voltages can lead to the device’s ESD protection.BSP315PE6327T has the capability of reducing power consumption and production costs, enabling smoother operation of logic circuits, thanks to its advanced technology. This device also provides a high level of protection against ESD due to its low voltage and low consumption.BSP315PE6327T can be used in a variety of applications including power distribution and supply, communications, audio, lighting, automotive safety systems, and general purpose control. Power distribution and supply: BSP315PE6327T are suitable for use in high performance power distribution and supply systems, providing accurate switching, high frequency operation, and a higher voltage at the gate than other devices. It is also suitable for telecom, lighting and other technologies, such as in-circuit communication, audio applications, and industrial control applications. The device provides up to 2.5A operation.Communications: BSP315PE6327T are suitable for use in telecommunication and other communication systems, providing efficient power management and high speed switching.Audio: BSP315PE6327T are suitable for use in audio applications, including audio mixing, background music systems, sound processing, and production systems.Lighting: BSP315PE6327T are suitable for use in lighting systems, providing accurate and efficient light control, low energy usage and a higher level of efficiency compared to other FETs.Automotive safety: BSP315PE6327T are suitable for use in automotive safety systems, providing efficient power management and improved driver safety.General purpose control: BSP315PE6327T are also suitable for use in general purpose control applications, offering advanced performance and low power consumption.The working principle of BSP315PE6327T is that a positive voltage applied to the gate turns it on, while the depleted channel underneath the gate is turned off. When the gate is opened, a current flow is permitted in the channel, allowing current to flow between the source and the drain, and providing the desired switching action. As the gate voltage is increased, the channel is turned “on” and current can flow through the MOSFET. As the gate voltage is decreased, the channel is turned “off” and current does not flow through the MOSFET.BSP315PE6327T offers a cost-effective and high-performance solution that can be used in a wide variety of applications. The device has low power consumption, and provides high levels of protection against ESD. It also offers high frequency operation, and a higher voltage at the gate compared to other FETs. The device has the capability to reduce power consumption and production costs, allowing smoother operation of logic circuits, while providing a versatile device that can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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