Allicdata Part #: | BSP373L6327HTSA1TR-ND |
Manufacturer Part#: |
BSP373L6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 1.7A SOT-223 |
More Detail: | N-Channel 100V 1.7A (Ta) 1.8W (Ta) Surface Mount P... |
DataSheet: | BSP373L6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±20V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSP373L6327HTSA1 application field and working principle
Wide band gap semiconductor materials based power components have wide application now and then.BSP373L6327HTSA1, as a kind of power field-effect transistor (FET), is one of application products with wide range of application fields.In this paper, its application field and working principle are introduced.
Application Field
BSP373L6327HTSA1 is suitable for the applications in high speed switching and high power driver such as IGBT, bridge rectifier, MOSFET, etc. There are the following two common application fields for BSP373L6327HTSA1:
- High-Speed Switching: BSP373L6327HTSA1 is mainly used in high-speed switching circuits, such as in electronic ballasts, high-power DC relay switching, electronic DC-DC converters, and so on.
- High-Power Driver: BSP373L6327HTSA1 is mainly used in high-power driver circuits, such as MOSFET, high-power bridge rectifier, IGBT, and so on.
Working Principle
BSP373L6327HTSA1 is a kind of power field-effect transistor (FET), which is different from a normal transistor. It is usually composed of source, drain and gate terminals. The source terminal is the source of electric current and is connected to the positive end of the power supply. The gate electrode is at the center, and the signal voltage or current will control the gate electrode. The drain is connected to the negative end of the power supply, and the electric current will pass through the gate electrode between the source and the drain.
The working principle of BSP373L6327HTSA1 is that when there is no current in the gate electrode, the electric current will not pass through the channel between the source and the drain and the device is in the cutoff state. When a positive voltage is applied to the gate electrode, the channel channel is formed between the source and the drain, and current will pass through the channel. In this way, the FET can realize open circuit, close circuit or adjust the current from the control level of the gate electrode.
Conclusion
In summary, BSP373L6327HTSA1 is widely applied in high-speed switching and high-power driver, and its working principle is that the FET realizes open circuit, close circuit or current adjustment from the controlling level of the gate electrode. The advantages of BSP373L6327HTSA1 include high threshold resistivity, high-speed switching, and fast-recovery time.
The specific data is subject to PDF, and the above content is for reference
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