Allicdata Part #: | BSP317PE6327XTINTR-ND |
Manufacturer Part#: |
BSP317PE6327T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 250V 0.43A SOT223 |
More Detail: | P-Channel 250V 430mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP317PE6327T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 370µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 262pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15.1nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 430mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 430mA (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSP317PE6327T is a N-Channel power MOSFET designed specifically for high voltage switched-mode power applications. It has a drain-source voltage rating of 600 V and an impressive maximum power dissipation of 150 Watts, making it the ideal choice for a wide range of high voltage power switching applications. In this article, we will discuss the application field and working principle of the BSP317PE6327T.
Application Field
The BSP317PE6327T’s impressive power handling and high efficiency make it an ideal choice for a variety of warm and high voltage (HV) switching applications. Common applications include motor speed control, DC-DC converters, motor drives, and switching power supplies. The device’s high-voltage rating also makes it a great choice for replacing bulky electromechanical relays in applications such as automotive circuit switching and industrial control systems. Additionally, the device’s low on-resistance of only 2.4 Ohms makes it ideal for applications that require fast switching and switching at high frequencies.
Working Principle
The BSP317PE6327T is a N-Channel Enhancement-Mode power MOSFET. This type of MOSFET is designed to be turned on or off by applying a low voltage signal. When the voltage signal is applied, the MOSFET’s channel is struck, allowing current to flow through it. If the voltage signal is removed, the MOSFET’s channel is no longer available and no current can flow through it. This makes N-Channel enhancement-mode power MOSFETs ideal for high voltage applications where current must be quickly switched on and off.
The BSP317PE6327T’s design includes a special electrode layout, which allows it to handle higher voltages. The device also uses a protective gate oxide layer, which makes it resistant to short-term thermal stress. This makes it an ideal choice for hot or high voltage applications, where performance and reliability are essential.
Conclusion
The BSP317PE6327T is a versatile N-Channel enhancement-mode power MOSFET designed specifically for high voltage switched-mode power applications. Its impressive power handling, high-efficiency, and low on-resistance make it an ideal choice for a wide range of high voltage power switching applications. Thanks to its protective gate oxide layer, the device can handle high temperatures and voltages, making it an ideal choice for hot or high-voltage applications. In short, the BSP317PE6327T is a great choice for any power application that needs fast switching, high power, and high reliability.
The specific data is subject to PDF, and the above content is for reference
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