DDTB114EC-7-F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DDTB114EC-7-F Application Field and Working Principle

The DDTB114EC-7-F is an NPN technology, pre-biased single transistor, created with a built in base bias for use in analog electronic circuits. It is a type of BJT (Bipolar Junction Transistor) whose application fields include switching, amplification and low input bias current for low power electronic designs. The operating temperature range for this product is from -55C to +150C.

Constructive Design and Specifications

DDTB114EC-7-F is constructed with a metalized hermetic sealed ceramic body, groved front and back sides, and a metal lid. The dimensions of the package are: 0.37 inch x 0.37 inch x 0.19 inch, and the lead pins are further segmented into a maximum of 4. The transistors built-in base bias is adjusted in order to maintain a specific collector to base current. The amount of pre-bias current can be adjusted in the range from 10mA to 20mA. This is also known as Collector to Base Bias Current or Ib. The product also features a maximum collector power dissipation of 100 mW, maximum collector current amplification factor, or hFE of 250, and voltage drops at the output (VCE) of 1V to 1.2V.

Working Principles

The DDTB114EC-7-F is a BJT type of transistor, which means that the operation of the device is based on the principle of a junction between n-type and p-type semiconductor material. This is further divided and into two sub categories, depending on the type of current flow. NPN transistors, which DDTB114EC-7-F is part of, current flows from the collector to the emitter and the base biasing of this type of transistor is negative. This type of technology works by controlling the current flow, thus allowing for the input signal for a specific circuit to be amplified or switched.

Applications

The DDTB114EC-7-F is most frequently seen used in analog electronic design, as it provides low power consumption and relatively high voltage drops. Its adjustable pre-bias current feature makes it ideal for use in audio switches, signal processing circuits and amplifiers. Additionally, it can be used in variable optimization circuits, switched attenuators and various light control applications. The circuit stability is further improved thanks to the thermal stability feature of the device.

Conclusion

The DDTB114EC-7-F is a single pre-biased NPN type of BJT transistor, designed with a built-in base bias and an adjustable pre-bias current. It is most often associated with low power consumption analogue designs, due to its low collector to base current and relatively high voltage drops. This type of technology is well suited for audio switches, signal processing circuits and amplifiers, as well as for the implementation of variable optimization circuits, switched attenuators and light control applications.

The specific data is subject to PDF, and the above content is for reference