DDTB114TC-7-F

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA (ICBO)
Frequency - Transition:	200MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	DTB114

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Introduction

The DDTB114TC-7-F transistor is a single, pre-biased, NPN bipolar junction transistor (BJT). It is designed to be used in applications that require a high level of thermal stability and repeatability. This type of transistor is ideal for a variety of applications, including small signal amplification, switching, and power applications. This article will discuss the working principle and application fields of the DDTB114TC-7-F transistor.

Application Field

The DDTB114TC-7-F is a general-purpose transistor that is ideal for a variety of applications, including small signal amplification, switching, and power applications. It is also suitable for applications where an electrical or thermal stability is required. The main application fields for the transistor include low-noise amplifiers, DC power control circuits, analog switches, and small signal amplifiers.

Working Principle

The DDTB114TC-7-F is a NPN bipolar junction transistor (BJT). The transistor consists of three terminals, the emitter, base, and collector. The emitter is the source of majority carriers, while the base is the control terminal and the collector is the sink of majority carriers. The majority carriers at the collector are created by the injection of minority carriers at the emitter. When the base voltage is higher than the emitter voltage, electrons from the emitter are injected into the base and are collected by the collector. This process is known as forward bias and creates a current flow from the emitter to the collector. The transistor can also be operated in the opposite direction, or in reverse bias, in which case a current flow is created from the collector to the emitter.

Conclusion

In conclusion, the DDTB114TC-7-F is a single, pre-biased, NPN bipolar junction transistor that is ideal for a variety of applications, such as low-noise amplifiers, DC power control circuits, analog switches, and small signal amplifiers. It works by creating a current flow between the emitter and collector in a forward bias condition, and between the collector and emitter in a reverse bias condition. The DDTB114TC-7-F transistor is an ideal choice for applications that require a high level of thermal stability and repeatability.

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