
Allicdata Part #: | DDTC113ZEDITR-ND |
Manufacturer Part#: |
DDTC113ZE-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.05530 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DDTC113 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 5mA, 5V |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC113ZE-7 is a transistor specifically classified as a single, pre-biased type of bipolar junction transistor (BJT). This particular transistor is composed of two group types of silicon, each designed to provide very specific characteristics. These characteristics are vital in optimizing the performance and operational capabilities of the DDTC113ZE-7.
The two groups of silicon are called the NPN and PNP, which stands for negative-positive-negative and positive-negative-positive. As this description implies, each type of transistor contains two gate electrodes and one collector electrode. For example, the NPN group has one gate electrode as the anode and one gate electrode as the cathode, and the PNP group has one gate electrode as the anode and another as the cathode.
At the very core of the DDTC113ZE-7’s design is its pre-biased nature. Unlike a traditional BJT, the DDTC113ZE-7 can be pre-programmed so that its base and collector elements are set to a given voltage, eliminating the need for a physical bias resistance.Through the operation of the DDTC113ZE-7, one can deduce that it is designed with a field effect. The field effect is a result of the amount of charge that is created along the base-collector junction. This charge is essential in controlling the current flow within the DDTC113ZE-7. In addition, the charge created also assists in regulating the current flow in the collector region by preventing an excessive amount of current through the transistor.
Additionally, the presence of a field effect also allows the DDTC113ZE-7 to switch its state very quickly, making it quite useful in applications where high speed switching is required. By regulating the current flow in the junction, the DDTC113ZE-7 can switch its state in a very short period of time, effectively allowing devices to be controlled very rapidly.
The DDTC113ZE-7 has numerous practical applications, ranging from audio amplifiers to switching power supplies. As previously mentioned, the DDTC113ZE-7’s pre-biased nature allows it to work efficiently in a variety of applications. In an audio amplifier, the DDTC113ZE-7 can be used to amplify the signal output of the amplifiers, further improving their overall sound quality. On the other hand, its switching capabilities can be utilized in power converter systems, providing an efficient and reliable means of controlling the power supply.
In conclusion, the DDTC113ZE-7 is a single, pre-biased BJT that is well suited for a variety of applications. Its field effect allows for rapid switching that is ideal for high speed switching purposes, and its pre-biased nature eliminates the need for a physical bias resistor. As such, the DDTC113ZE-7 has become a popular choice for many applications, from audio amplifiers to power conversion systems.
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DDTC114TCA-7 | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 200MW S... |
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DDTC115EE-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 150MW S... |
DDTC123JCA-7-F | Diodes Incor... | -- | 2011 | TRANS PREBIAS NPN 200MW S... |
DDTC125TKA-7-F | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTC143ZKA-7-F | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTC123ECA-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTC123YCA-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTC123EE-7 | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 150MW S... |
DDTC142TU-7-F | Diodes Incor... | 0.04 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
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DDTC124TKA-7-F | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTC144TE-7-F | Diodes Incor... | -- | 1000 | TRANS PREBIAS NPN 150MW S... |
DDTC115GCA-7 | Diodes Incor... | 0.06 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTC125TUA-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
DDTC115ECA-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS PREBIAS NPN 200MW S... |
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