DDTC142TU-7-F

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The DDTC142TU-7-F is a single pre-biased bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is part of the DiodesZetex™ DTC series of transistors, and has a wide range of applications. This document provides an overview of the DDTC142TU-7-F, including its field of application and its working principle.

Applications

The DDTC142TU-7-F is most commonly used as a wide band in small-signal switching and amplification applications. Its compact size makes it suitable for many consumer and industrial applications, such as integrated circuits, power supplies, consumer audio, broadcast, recording and storage devices and motor drivers. It is also used in audio and digital filters, logic level converters, and various communication circuits.

Furthermore, the DDTC142TU-7-F has a relatively low noise figure, making it suitable for noise sensitive applications like seismic recording, medical equipment, and consumer audio. Its wide operating temperature range of -55°C to +150°C allows for use in extreme environments and its low Pd rating (2.5W at +25°C free-air temperature) means that the DDTC142TU-7-F may be used in thermally challenged applications.

Features

The DDTC142TU-7-F has many features that enhance its utility in applications. It is available in two package types: SOT-23 and SOT-323. It is 2 ampere capable and has a low input capacitance of 50 pF. It has a frequency response of 0.5-100MHz, and an open emitter output capacitance of 3 pF. It has an input offset voltage of 25 mV, an output voltage of 150 mV, and a high power gain of 40 dB. Its low quiescent current helps to extend battery life.

Working Principle

The DDTC142TU-7-F is a BJT silicon transistor, which is a three-terminal, semiconductor device composed of layers of N and P type semiconductor materials. It contains two PN junction diodes, connected back-to-back, with the middle junction functioning as the base of the transistor. The base is a conductive path between the collector and emitter, and the flow of current from collector to emitter is controlled via the base.

The current gain, which is a measure of how much an input current affects the output current of the BJT, is determined by two parameters—the ratio of thedc collector current to the dc emitter current (Beta) and the ratio of the collector current to the base current (HFE). The Beta of the DDTC142TU-7-F is 40, while the HFE is 10.

The DDTC142TU-7-F is specified as pre-biased, which means the emitter is supplied with a constant voltage when the base-collector voltage is varied. This results in a much larger dynamic range for the device than for an ‘off-bias’ transistor. Pre-biasing also helps to improve the device\'s linearity and stability.

In summary, the DDTC142TU-7-F is a pre-biased, single bipolar junction transistor from Diodes Incorporated. Its features and operating parameters make it suitable for a wide range of applications, from high-end consumer audio to extreme temperature environments. Its low noise, low input capacitance, and pre-biased design make it appropriate for a variety of demanding applications.

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