DDTC125TKA-7-F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DDTC125TKA-7-F is a pre-biased, single bipolar (BJT) transistor. It is a PNP type transistor, and is capable of operating over the 2.7 - 18 volt voltage range, making it suitable for use in a variety of applications. The DDTC125TKA-7-F is available in both SOT-323 and SOT-223 packages, making it a versatile and cost-effective choice for medium-power applications.

This particular device is designed for use in switching, amplifier, and medium-power driver applications. Its collector-emitter saturation voltage of 4 V (typical) and base current of 1 μA (maximum) make it a suitable choice for applications where low power operation is required. Additionally, the device is capable of switching up to 1.2 A (continuous) and 3 A (peak) in total cycle times of up to 18 ms.

The DDTC125TKA-7-F is a pre-biased transistor. This means that it is operating at both its emitter and base bias points, which helps reduce the setup time and power consumption in the application. The device has two terminals that are connected together, the emitter and collector. This creates a junction between the two terminals that helps establish the bas-emitter and collector-emitter boundaries.

The DDTC125TKA-7-F has a typical forward current gain of 50 at 1mA collector current (minimum). This characteristic allows for the device to provide good output level at a low input voltage, and is ideal for linear applications such as amplifier stages. In addition, the device has a high breakdown voltage of 700V, making it suitable for applications requiring high-voltage operation.

The DDTC125TKA-7-F is capable of handling high speed switching. The device has a low transition delay of only 2 µs, allowing for efficient power switching in applications that require fast switching times. Additionally, the device has a low gate charge, which reduces the amount of charge stored on the device when switching, allowing for increased switching efficiency.

The DDTC125TKA-7-F has a number of built-in protections that help protect it from voltage peaks and surges. The device has a high ESD rating of ± 8kV(HBM), helping to protect the device from electrostatic discharge. The device also has built-in protection against over-voltage and over-current, making it suitable for use in a variety of power conditioning applications.

The DDTC125TKA-7-F is a versatile, cost-effective pre-biased single bipolar transistor. Its wide voltage range and low power consumption make it suitable for a variety of medium-power applications. Its fast switching speeds and built-in protection features make it an ideal choice for applications requiring both power switching and protection from voltage peaks and surges.

The specific data is subject to PDF, and the above content is for reference