DDTC144GE-7-F Allicdata Electronics
Allicdata Part #:

DDTC144GE-FDITR-ND

Manufacturer Part#:

DDTC144GE-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC144GE-7-F datasheetDDTC144GE-7-F Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.03985
Stock 3000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: DDTC144
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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DDTC144GE-7-F is a type of transistor, which belongs to the single, pre-biased, Bipolar (BJT) type of transistors. It is essentially a three-terminal device, which has a current carrying path that runs between the emitter and the collector. The base terminal is used to control the amount of current flowing between these two terminals. This type of transistor is also known as an NPN Pre-Bias transistor, which means that the base-emitter junction is already biased before the application of an external current.

The working principle of the DDTC144GE-7-F is relatively simple. When a voltage is applied to the base of the transistor, it creates an electric field, which in turn creates a current to flow through the transistor. This current then creates a magnetic field, which influences the current between the collector and the emitter. This final current then is used in the application of the transistor and is usually much higher than the initial voltage applied to the base.

The DDTC144GE-7-F transistor is used in a wide range of applications such as Audio amplifiers, RF amplifiers, power amplifiers, switching circuits, and many more. It is an ideal choice for applications which require low power consumption, low noise, and high temperature operation. It is often used as an amplifier in audio systems, which improves the sound quality by amplifying music louder. Additionally, since it is pre-biased, it can be quickly configured and integrated into a circuit without the need for additional components.

In RF amplifiers, the DDTC144GE-7-F is often used to amplify signals with a wide range of frequencies. It is designed for high frequencies and will accurately boost weak signals with low distortion. In power amplifiers, it is used to boost the output of a power source. It is usually used as a driver for high power applications and is capable of high current operation.

In switching circuits, the DDTC144GE-7-F is used as a switch that is controlled by a low power input. It is an ideal choice for applications where switching must be done at low power. In this case, it is able to function as both a switch and an amplifier, allowing it to be used to control other devices.

The DDTC144GE-7-F transistor is a great choice for applications where low power consumption, low noise, and high temperature operation are required. It is pre-biased, meaning it can be quickly configured and integrated into a circuit without the need for additional components. Additionally, it is suitable for a variety of applications such as audio amplifiers, RF amplifiers, power amplifiers, and switching circuits.

The specific data is subject to PDF, and the above content is for reference

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