DDTC114GCA-7-F Allicdata Electronics
Allicdata Part #:

DDTC114GCA-FDITR-ND

Manufacturer Part#:

DDTC114GCA-7-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC114GCA-7-F datasheetDDTC114GCA-7-F Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: DDTC114
Description

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DDTC114GCA-7-F Application Field and Working Principle

The DDTC114GCA-7-F is a Transistors-Bipolar (BJT)-Single, Pre-Biased device. It is a small signal PNP transistor that has been pre-biased, meaning that it needs minimal bias currents in order to operate in its intended range.

Application Field

The greatest strength of the DDTC114GCA-7-F lies in its use as an audio amplifier. It is capable of delivering quality sound through its high power dissipation capabilities. Additionally, the transistor’s high DC current gain and peak-collector current carrying capacity make it an ideal choice for medium power audio amplifier applications. Other common uses include but are not limited to switching, linear amplification, and signal regeneration, among others.

Working Principle

The DDTC114GCA-7-F is a PNP transistor and has three terminals – the emitter, the base, and the collector. The emitter forms the input terminal and the base forms the controlling terminal. The collector forms the output terminal. The base-emitter junction is a forward-biased one and the base-collector junction is a reverse-biased one. The transistor works on the principle of input from the base-emitter junction and output from the base-collector junction. That is, the input voltage applied to the base-emitter junction results in a small change in current at the output terminal of the base-collector junction. When a small current is applied to the base, the voltages between collector and the emitter decreases. A larger current is induced in the collector, allowing it to drive a load or amplify the signal.

The DDTC114GCA-7-F is a great choice for medium power amplifiers. The excellent DC current gain and power dissipation characteristics make it an ideal choice for audio, power, and signal amplification. Additionally, its pre-biased design prevents oscillations and makes it easier to use. Its wide range of applications make it one of the most popular transistors available in the market today.

The specific data is subject to PDF, and the above content is for reference

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