DDTC114YCA-7

DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Base Part Number:	DDTC114
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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DDTC114YCA-7: Introduction

The DDTC114YCA-7 is a pre-biased single bipolar junction transistor (BJT) that can be used in a variety of applications. It is manufactured by STMicroelectronics and is part of the Darwin–Izmir High Power range of BJT transistors. This device is designed for use in a wide variety of applications, such as power switches, power supplies, motor control and general amplifiers.The DDTC114YCA-7 is made of the NPN type, and it is rated for a maximum voltage of 110V and a maximum current of 5.2A. It has a collector-emitter breakdown voltage of 100V and a collector-base breakdown voltage of 120V, and it can handle a maximum power dissipation of 17.4 watts. It is also available in various packages, including the TO-220 and D2PAK.

Working Principle

The DDTC114YCA-7 is a BJT that works based on a three-layer structure of semiconductor material. This structure consists of an emitter, a collector, and a base. When a current passes through the emitter and the base, it creates a depletion region due to the negative charges created by the reverse-biased doping of the base. This depletion region works as an insulator which blocks the electrons between the collector and emitter, effectively halting current flow. When a positive voltage is applied to the base terminal, these electrons are no longer blocked by the depletion region, and current begins to flow. This creates a current flow between the collector and emitter, and is multiplied by a factor known as the current gain of the transistor (typically around 100). This process is known as electronhole injection, and it is used to amplify signals or switch circuits.

Application Field

The DDTC114YCA-7 is a versatile device which has a wide range of applications. It can be used for power switching, power supplies, motor control, and general amplifier circuits.It can be used as a power switch due to its high switching speed and low on-state resistance. This makes it great for applications such as power FETs, relays, and other devices that require fast switching.It is also well-suited for use in power supplies due to its low voltage drop and low power dissipation. This makes it great for high-efficiency switching power supplies as well as LED drivers.In motor control applications, the DDTC114YCA-7 can be used as an H-bridge driver device. This is because it has low on-state resistance, which is important for controlling high-current signals.Finally, it is also well-suited for use in amplifier circuits due to its high current gain. This makes it great for applications such as audio amplifiers, radio frequency amplifiers, and other signal-amplifying applications.

Conclusion

The DDTC114YCA-7 is a pre-biased single NPN bipolar junction transistor (BJT) that is manufactured by STMicroelectronics and is part of the Darwin–Izmir High Power range of BJT transistors. It has a maximum voltage of 110V, a maximum current of 5.2A, and a maximum power dissipation of 17.4 watts.It is versatile, and can be used for a variety of applications, such as power switches, power supplies, motor control and general amplifier circuits. It has a low on-state resistance and a high current gain, making it particularly suitable for applications that require high-current signals and high-efficiency power supplies.

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