DDTC122TE-7 Allicdata Electronics
Allicdata Part #:

DDTC122TEDITR-ND

Manufacturer Part#:

DDTC122TE-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC122TE-7 datasheetDDTC122TE-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.05530
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: DDTC122
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Base (R1): 220 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTC122TE-7 is a type of single pre-biased bipolar junction transistor (BJT) which is designed for a variety of different applications. They are most popular in audio systems, amplifiers, power supplies, communications, and DC motor control circuits. This type of transistor is a single pre-biased BJT, and it has a maximum current gain (hfe) of 160. It also has an average current gain of 120, and a maximum collector-emitter voltage of 400V. The transistor has a total of three pins, with the collector, base, and emitter connected to one another. The DDTC122TE-7 also has a large storage capability, making it ideal for use in high-side switching applications. The first step in understanding the working principle of the DDTC122TE-7 is to understand how a BJT works. Bjt transistors are three terminal semiconductors, and they are made up of two PN junction diodes. In order to function, a base current needs to be applied to the transistors, allowing the electrons to flow from the emitter to the collector. The current gain of the DDTC122TE-7 is determined by the amount of current which flows through the transistor. As previously discussed, the DDTC122TE-7 is a single pre-biased BJT, which means it has an internal current bias, or pre-bias. This allows the transistor to be used without the need to externally bias the device. This pre-bias helps to increase the current gain of the device. The DDTC122TE-7 is ideal for use in audio systems, amplifiers, power supplies, and communications. In audio systems, the transistor can be used as an amplifier, as it can help to increase the volume of audio signals. In amplifiers, the transistor can be used as a power source, which can help to increase the power output of the amplifier. In power supplies, the transistor can be used to regulate power output, and the transistor can also be used to help regulate the current in DC motor control circuits. This can help to provide more accurate control over the amount of power supplied to the motor. To summarize, the DDTC122TE-7 is a single pre-biased bipolar junction transistor which is designed for use in a variety of applications such as audio systems, amplifiers, power supplies, communications, and DC motor control circuits. It has a maximum current gain of 160, an average current gain of 120, and a maximum collector-emitter voltage of 400V. The transistor has a large storage capability, which makes it ideal for use in high-side switching applications. The internal pre-bias allows the transistor to be used without the need to externally bias the device, increasing the current gain of the device.

The specific data is subject to PDF, and the above content is for reference

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