Allicdata Part #: | DDTC123EKA-7-F-ND |
Manufacturer Part#: |
DDTC123EKA-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 200MW SC59-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC123EKA-7-F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 20mA, 5V |
Base Part Number: | DDTC123 |
Supplier Device Package: | SC-59-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A DDTC123EKA-7-F is a single, pre-biased transistor and would typically be used in applications such as automotive, industrial and telecommunications. This device is very reliable in terms of performance, and the maximum temperature that can be safely operated is up to +150 °C. It was designed to resist up to 5A of peak transistor current, and 5.3A continuously.
A DDTC123EKA-7-F works on the principle of manipulating the current entering the device, such that it is amplified with a different level of current. It consists of three layers of semiconductor material that are arranged in an overlapping configuration. In order to control the current flow between the emitter and the collector, a known amount of voltage (also known as the bias voltage) is applied to the Base-Emitter junction. This voltage is responsible for the transistor being “on” or “off.”
The DDTC123EKA-7-F is a NPN transistor, meaning there is a negative voltage on the collector-base junction and the emitter is at a slight positive voltage. When current enters the emitter, it is amplified by electron movement so that it becomes larger when it exits the collector. This is what amplifies the current, as the current in the collector is larger than that at the emitter. When no current enters the emitter, the transistor is disabled and the current from the collector is blocked. This is how theddtc123eka-7-f functions as a switch.
In terms of switching frequency; the ddtc123eka-7-f is able to function at a switching frequency of up to 200kHz. For this reason, it can be used in applications that require higher switching frequenciessuch as image processing and high frequency communications. Furthermore, the ddtc123eka-7-f is very small in size (packaged in an MSOP-8 package) and is thus particularly suitable for applications where space is at a premium.
The maximum power dissipation of the DDTC123EKA-7-F is 625 mW, which allows it to be used in applications that require higher power dissipation capabilities. The operating temperature range is -55 °C to +150 °C, which ensures reliable operation over a broad temperature range.
In conclusion, the DDTC123EKA-7-F is designed to offer reliable performance in a variety of applications. It is capable of switching at high frequencies, and is able to dissipate a significant amount of power. Finally, it is very small in size, making it suitable for space-limited applications.
The specific data is subject to PDF, and the above content is for reference
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