DDTC125TE-7

DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Base Part Number:	DDTC125
Supplier Device Package:	SOT-523
Package / Case:	SOT-523
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 50µA, 500µA
Series:	--
Resistor - Base (R1):	200 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Discontinued at Digi-Key
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction to the DDTC125TE-7

The DDTC125TE-7 is a single, pre-biased transistor. It is a bipolar junction transistor (BJT) that has been specifically designed for use in a variety of applications. It is manufactured by Diodes, Inc., and is a high electrical performance device. It offers excellent voltage and current handling capabilities, as well as low power dissipation.

Applications of the DDTC125TE-7

The DDTC125TE-7 is widely used in a variety of applications. Its high electrical characteristics, ruggedness, and small package size make it suitable for a variety of switching and amplification tasks. Its main applications include: light-sensing circuits, audio pre-amplifiers, low frequency power amplifiers, over-voltage protecting circuits, current limiting circuits, multiplexers, and thermal protection.

Working Principle of the DDTC125TE-7

The DDTC125TE-7 is a bipolar junction transistor (BJT). The device uses three “junctions”, a Base-Emitter (BE), a Collector-Base (CB), and a Collector-Emitter (CE). The device works on the principle of majority charge carriers: when the Base-Collector (BC) potential is more negative than the Base-Emitter potential, it causes the transistor to switch off and no current flows from collector to emitter (off-state). Conversely, when the BC potential is more positive than the BE potential, current flows from collector to emitter, making the device act as a switch (on-state).The DDTC125TE-7 has two separate circuits inside – its own pre-biased circuit and a reverse-biased circuit. The reverse-biased circuit consists of two positions one of which is connected to the Base and the other to the Collector of the device. When the BC potential is higher than the BE potential, the reverse-biased circuit is reversed and negative feedback is applied to the Base, blocking current flow from the Collector to the Emitter. This prevents the device from turning on until the reverse biasing voltage is removed.The pre-biased circuit is used to ensure a constant current flow from base to collector even when the device is switched off. This is accomplished by passing a small current through an external resistor, connecting the Base and Collector. This ensures a constant current flow from base to collector, keeping the device in a constant on-state.By using both reverse- and pre-biased circuits, the DDTC125TE-7 can be used for a variety of applications. It is great for switching, amplification, and protection circuits, as it offers excellent current and voltage handling capabilities, along with low power dissipation.

Conclusion

The DDTC125TE-7 is a single, pre-biased transistor. It is widely used in various applications, such as light-sensing, over-voltage protection, and current limiting circuits. Its working principle is based on a BJT with two distinct circuits, the reverse-biased and pre-biased, which work together to ensure the correct operation of the device. The pre-biased circuit is used to maintain a constant current flow from the base to the collector, even when the device is switched off, ensuring ideal performance and reliability.

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