DDTC142JE-7 Allicdata Electronics
Allicdata Part #:

DDTC142JEDITR-ND

Manufacturer Part#:

DDTC142JE-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN 150MW SOT523
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DDTC142JE-7 datasheetDDTC142JE-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.05530
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Base Part Number: DTC142
Supplier Device Package: SOT-523
Package / Case: SOT-523
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Series: --
Resistor - Base (R1): 470 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DDTC142JE-7 is a single, pre-biased bipolar junction transistor (BJT) designed and manufactured by NXP Semiconductors. It is a voltage-controlled, three-terminal device that can be used in a variety of applications such as amplifiers, switches, and voltage regulators. The device is designed to operate with a power supply of up to 45V and its maximum collector current rating is 1.5A. It is available in both SMD and through-hole packages.

The DDTC142JE-7 consists of two p-type and one n-type semiconductor junctions. It is an NPN-type transistor, meaning that the current is allowed to flow from the collector to the emitter when the voltage is applied to the base. It utilizes bipolar-transistor technology to provide increased switching speed and reduced power consumption compared to traditional transistors. The DDTC142JE-7 has a high current gain, which means that it can be used to amplify signals and control current flow.

The working principle of the DDTC142JE-7 is based on the principles of junction field-effect transistors (JFETs). In this type of transistor, current is controlled by the electric field between the source and drain electrodes, instead of the traditional current-controlled base. In the DDTC142JE-7, the base electrode is connected to the emitter and the collector electrodes are connected to the gate voltage. When a voltage is applied between the base and gate, an electric field is created, which controls the current flow between the collector and emitter. The DDTC142JE-7 can be used to amplify and switch AC and DC signals, as well as providing low-voltage and low-level current control.

The DDTC142JE-7 has many applications in industrial, automotive, and consumer electronics. It can be used in power amplifiers, antennas, radio transmitters, and receivers. It can also be used to control the flow of current in potentiometers, relays, and motors. Its high gain, low voltage, and low power consumption features make it a good choice for low-power applications such as cell phones, wearables, and other portable electronics.

In summary, the DDTC142JE-7 is a single, pre-biased bipolar junction transistor designed and manufactured by NXP Semiconductors. It provides increased switching speed and reduced power consumption compared to traditional transistors, and can be used to amplify and switch AC and DC signals, as well as providing low-voltage and low-level current control. The device is designed to operate with a power supply of up to 45V and its maximum collector current rating is 1.5A. It has many applications in industrial, automotive, and consumer electronics, and is a good choice for low-power applications due to its high gain, low voltage, and low power consumption features.

The specific data is subject to PDF, and the above content is for reference

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