Allicdata Part #: | DDTC142JEDITR-ND |
Manufacturer Part#: |
DDTC142JE-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC142JE-7 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.05530 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DTC142 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 470 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DDTC142JE-7 is a single, pre-biased bipolar junction transistor (BJT) designed and manufactured by NXP Semiconductors. It is a voltage-controlled, three-terminal device that can be used in a variety of applications such as amplifiers, switches, and voltage regulators. The device is designed to operate with a power supply of up to 45V and its maximum collector current rating is 1.5A. It is available in both SMD and through-hole packages.
The DDTC142JE-7 consists of two p-type and one n-type semiconductor junctions. It is an NPN-type transistor, meaning that the current is allowed to flow from the collector to the emitter when the voltage is applied to the base. It utilizes bipolar-transistor technology to provide increased switching speed and reduced power consumption compared to traditional transistors. The DDTC142JE-7 has a high current gain, which means that it can be used to amplify signals and control current flow.
The working principle of the DDTC142JE-7 is based on the principles of junction field-effect transistors (JFETs). In this type of transistor, current is controlled by the electric field between the source and drain electrodes, instead of the traditional current-controlled base. In the DDTC142JE-7, the base electrode is connected to the emitter and the collector electrodes are connected to the gate voltage. When a voltage is applied between the base and gate, an electric field is created, which controls the current flow between the collector and emitter. The DDTC142JE-7 can be used to amplify and switch AC and DC signals, as well as providing low-voltage and low-level current control.
The DDTC142JE-7 has many applications in industrial, automotive, and consumer electronics. It can be used in power amplifiers, antennas, radio transmitters, and receivers. It can also be used to control the flow of current in potentiometers, relays, and motors. Its high gain, low voltage, and low power consumption features make it a good choice for low-power applications such as cell phones, wearables, and other portable electronics.
In summary, the DDTC142JE-7 is a single, pre-biased bipolar junction transistor designed and manufactured by NXP Semiconductors. It provides increased switching speed and reduced power consumption compared to traditional transistors, and can be used to amplify and switch AC and DC signals, as well as providing low-voltage and low-level current control. The device is designed to operate with a power supply of up to 45V and its maximum collector current rating is 1.5A. It has many applications in industrial, automotive, and consumer electronics, and is a good choice for low-power applications due to its high gain, low voltage, and low power consumption features.
The specific data is subject to PDF, and the above content is for reference
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