DDTC143EE-7 Discrete Semiconductor Products |
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Allicdata Part #: | DDTC143EEDITR-ND |
Manufacturer Part#: |
DDTC143EE-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS NPN 150MW SOT523 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DDTC143EE-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 5V |
Base Part Number: | DTC143 |
Supplier Device Package: | SOT-523 |
Package / Case: | SOT-523 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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A DDTC143EE-7 single, pre-biased transistor is a type of BJT (Bipolar Junction Transistor) device. It is primarily used as a power switch or amplifying element in electronic circuits and provides a range of features and benefits that make it ideal for a wide variety of applications.
A DDTC143EE-7 single, pre-biased transistor is constructed of n-type and p-type materials, forming a three-terminal device. The n-type material forms the emitter and the p-type materials forms the collector and base of the transistor. The base is typically connected to a voltage source and when a current flows through the base, it results in current flow through the collector-base junction, causing the transistor to switch from off to on.
The DDTC143EE-7 single, pre-biased transistor has several key benefits when compared to other types of transistors. Firstly, it does not need additional bias voltage to operate, and this makes it very efficient for applications where power consumption is a concern. Secondly, it is much faster than traditional MOSFETs, making it suitable for high-speed switching applications. Thirdly, the single-base DDTC143EE-7 is designed with diodes that protect it from excessive voltage and current transients.
As with any power switching device, the DDTC143EE-7 is subject to thermal runaway, leading to excessive temperatures that can damage the device. As a result, it is important to design circuits that eliminate the risk of thermal runaway. This can be done by regulating the current flow and frequency of the transistor, as well as providing adequate cooling to the device. Additionally, the transistor should not be exposed to an external voltage higher than its voltage rating.
DDTC143EE-7 single, pre-biased transistors can be used in a wide variety of applications. These include power switching circuits, driving motors, amplifying signals and linear control, as well as in analog and digital logic circuits. In order to achieve optimal results, the most suitable transistor for the application should be selected for maximum performance. In addition, appropriate protection circuitry should be used to protect the device from excessive voltage and current.
In conclusion, the DDTC143EE-7 single, pre-biased transistor is a versatile power switching device that can be used in a variety of applications. Its primary benefit lies in its low power consumption and efficiency. In addition, its high switching speed makes it suitable for high-speed switching applications. Furthermore, the DDTC143EE-7 provides protection from excessive voltage and current transients, making it a reliable and robust power switching device.
The specific data is subject to PDF, and the above content is for reference
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