DMN2028UFDH-7 Allicdata Electronics
Allicdata Part #:

DMN2028UFDH-7DITR-ND

Manufacturer Part#:

DMN2028UFDH-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 20V 6.8A POWERDI
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6...
DataSheet: DMN2028UFDH-7 datasheetDMN2028UFDH-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3030-8
Description

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When it comes to the applications and workings of DMN2028UFDH-7 transistors or (Field Effect Transistors — FETs), it is important to understand the basics of FETs as a whole before delving into the specifics of the DMN2028UFDH-7. FETs are transistors that are capable of amplifying or switching electronic signals. They operate by creating a voltage-controlled electronic field between two gate terminals, which, in turn, affects a channel of current connected in between a source and a drain. This, in summary, is the working principle of a FET.

The DMN2028UFDH-7 transistor is part of the MOSFET array. A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of FET that is designed with a fixed gate width to deliver higher current abilities as compared to traditional FETs. In addition to being able to offer more current, MOSFETs also usually have faster switching times than FETs. The DMN2028UFDH-7 MOSFET is part of a MOSFET array, meaning it contains two or more MOSFETs within one package for simpler circuit connections and better efficiency.

When it comes to the applications of DMN2028UFDH-7, the main areas of use are programmable power supplies, motor controls, and level translator applications. It also works great as a power switch in low to medium voltage applications. The DMN2028UFDH-7 can be used in circuits where high voltage and high current levels are required. The integrated MOSFET array offers superior performance over discrete single MOSFETs, as the MOSFET array allows more efficient connections, leading to better overall circuitry performance.

The DMN2028UFDH-7 MOSFET array is ideal for a variety of applications that require high voltage and high current levels, with its exceptional switching performance, low on-state resistance, and good input impedance characteristics. The DMN2028UFDH-7 is beneficial for applications that require higher current levels than other single MOSFETs, and it is suitable for applications where noise immunity is of utmost importance. Due to its low on-state resistance, the DMN2028UFDH-7 also works well in power systems, making it a popular choice for a variety of power systems applications.

In summary, the DMN2028UFDH-7 MOSFET array is designed to deliver a high level of current and voltage which makes it an ideal choice for applications that require higher current levels. Its working principle is to use an electronic field between the two gate terminals which then affects the channel of current between the source and the drain to create a voltage-controlled switching device. Its main area of applications are programmable power supplies, motor controls, level translator applications, as well as power systems.

The specific data is subject to PDF, and the above content is for reference

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