DMN2028USS-13

Vgs(th) (Max) @ Id:	1.3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.56W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1000pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	11.6nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	20 mOhm @ 9.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	7.3A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMN2028USS-13 Application Field and Working Principle

The DMN2028USS-13 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is a powerful and robust transistor structure often used as an electronic switch to control higher currents than a regular metal oxide semiconductor in an array of applications.

MOSFET Basics

Before proceeding to discuss the DMN2028USS-13, it is important to understand the fundamentals of MOSFETs.A MOSFET consists of three terminals: the gate, source, and drain. The gate is the electrical connection at which a voltage is applied to control the conductivity between the source and the drain. The source and drain are like electrodes, as current flow takes place between them under the influence of the gate voltage.When no voltage is applied to the gate terminal, the MOSFET will be “off”, with current flow completely blocked between the source and the drain. As the gate voltage rises, the device transitions from the “off” to the “on” state, increasing the current flow between the source and the drain.

DMN2028USS-13

The DMN2028USS-13 is a dual N-channel power MOSFET that offers superior performance with fast switching speeds and low gate ringing. It comes with a maximum drain-to-source voltage of 30V and a maximum drain current of 13A. The device features a low output capacitance, low gate charge, and noise immunity comparable to that of standard MOSFETs.The DMN2028USS-13 is useful for applications requiring higher switching current with extremely fast switching speed. It is well-suited for power conversion applications such as DC-DC converters and low-voltage AC mains switching. In fact, the DMN2028USS-13 is often used in variable-speed drive systems due to its ability to efficiently carry high currents while still providing low switching losses.

Working Principle

The DMN2028USS-13 works on the principle of the MOSFETs described earlier. When no voltage is applied to the gate terminal, the MOSFET is turned “off”, preventing current flow between the source and the drain. When a voltage is applied to the gate terminal, it creates an electrostatic field, which in turn enhances the density of the region between the gate and the drain, allowing current to flow freely.The voltage applied to the gate will control the current flow across the drain, allowing for precise current control. Furthermore, theDMN2028USS-13 has a low static gate resistance, which ensures that even at low voltages, the device can still switch efficiently.

Conclusion

The DMN2028USS-13 is a versatile transistor, ideal for applications requiring high current switching with fast switching speeds. Its low gate resistance and low output capacitance make it ideal for power conversion applications, and its noise immunity makes it suitable for variable-speed drive systems at higher frequencies. Understanding the device’s working principle is also important to ensure that it is correctly and safely used.

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