DMN2044UCB4-7 Allicdata Electronics

DMN2044UCB4-7 Discrete Semiconductor Products

Allicdata Part #:

DMN2044UCB4-7DITR-ND

Manufacturer Part#:

DMN2044UCB4-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET BVDSS: 8V 24V U-WLB1010-4
More Detail: N-Channel 20V 3.3A (Ta) 720mW Surface Mount U-WLB1...
DataSheet: DMN2044UCB4-7 datasheetDMN2044UCB4-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 900mV @ 250µA
Package / Case: 4-UFBGA, WLBGA
Supplier Device Package: U-WLB1010-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 720mW
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 8V
Series: --
Rds On (Max) @ Id, Vgs: 40 mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN2044UCB4-7 is a 20V N-channel Enhancement Mode MOSFET that is designed to be used in a wide variety of applications. It has a broad range of applications including power management and motor control. This application note will discuss the application field and working principle of the DMN2044UCB4-7.

The DMN2044UCB4-7 is an N-channel Enhancement Mode MOSFET that is designed for use in a variety of applications such as power management and motor control. It has an on-resistance of 0.43 Ohms and a gate-source voltage of -2.5 to -20V. This MOSFET has a maximum drain current of 44A and a maximum drain-source voltage of 165V.

This MOSFET is best suited for applications where high power handling and low on-resistance is required. Examples of applications that could use the DMN2044UCB4-7 MOSFET include switch mode power supplies, H-bridges, DC-DC converters, and power switching circuits. It can also be used in high-frequency inverter applications.

The DMN2044UCB4-7 MOSFET is an enhancement mode MOSFET. This means that it has an intrinsic body diode that needs to be biased to ensure proper operation of the device. The body diode is reversed biased when the gate-source voltage is positive compared to the drain source voltage. This allows the MOSFET to operate in enhancement mode.

In enhancement mode, the device can be switched on by applying a positive voltage to the gate-source. When this voltage is applied, electrons are attracted from the source to the gate, resulting in a thin layer of N-type MOSFET charge carriers. This thin layer of charge carriers attracts holes from the channel, creating a channel of electrons. This channel allows current to flow from source to drain when the gate-source voltage is held at a certain level.

To turn off the MOSFET, the gate-source voltage needs to be reversed to negative. This will reverse the direction of current flow, preventing current from flowing from source to drain. Applying a voltage to the gate-source at this point will not allow current to flow, as the channel of electrons has been reversed.

The working principle of the DMN2044UCB4-7 MOSFET allows it to be used in a variety of applications, such as switch mode power supplies, H-bridges, DC-DC converters, and power switching circuits. It is also suitable for high-frequency inverter applications. This device can handle high power and offers low on-resistance, making it a good choice for a variety of power, motor control, and logic applications.

The specific data is subject to PDF, and the above content is for reference

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