DMN2011UTS-13 Allicdata Electronics
Allicdata Part #:

DMN2011UTS-13DITR-ND

Manufacturer Part#:

DMN2011UTS-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 20V 21A 8-TSSOP
More Detail: N-Channel 20V 21A (Tc) 1.3W (Ta) Surface Mount 8-T...
DataSheet: DMN2011UTS-13 datasheetDMN2011UTS-13 Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN2011UTS-13 is a single, dual gate MOSFET, which is used in applications requiring high-speed and low-noise performance. It has a drain-source on-state resistance of 13 ohms, which can be adjusted by varying the gate or the drain-source voltage. It also has a linear drain current that is much lower than the on-state resistance.

The DMN2011UTS-13 is a enhancement mode MOSFET, which is a type of Field-Effect Transistor (FET). FETs work on the principle of field-effect, where a voltage applied to the gate electrode forms an electrostatic field that alters the conductivity of the device by controlling the number of carriers inside the source region and the drain region. This process of field-effect is used to control the output voltage and current of the device.

The DMN2011UTS-13 has a particularly low on-state resistance and noise, making it ideal for use in signals processing, switch-mode power supplies, and motor speed applications. Its low gate-source capacitance makes it suitable for use in fast switching applications. It also has a low gate threshold voltage, which makes it suitable for maximum current applications.

The DMN2011UTS-13 is a unipolar device, meaning it has only one type of active carrier present between the source and drain. This makes it suitable for use in systems with low voltage and current levels. It is also resistant to latch up, unlike some bipolar devices, which makes it suitable for use in applications that are sensitive to voltage changes.

The DMN2011UTS-13 also has an operating temperature range of -55°C to 150°C. This makes it suitable for use in high temperature applications. It also has a breakdown voltage of 20V, which allows the device to handle higher voltages and currents than lower breakdown voltage devices.

In conclusion, the DMN2011UTS-13 is an ideal choice for applications requiring high-speed and low-noise performance. Its low on-state resistance, low gate threshold voltage, low gate-source capacitance, unipolar characteristics, and wide temperature range make it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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