Allicdata Part #: | DMN21D1UDA-7B-ND |
Manufacturer Part#: |
DMN21D1UDA-7B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2 N-CH 20V X2DFN0806-6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 455mA (Ta) 310... |
DataSheet: | DMN21D1UDA-7B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 455mA (Ta) |
Rds On (Max) @ Id, Vgs: | 990 mOhm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.41nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 31pF @ 15V |
Power - Max: | 310mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, No Lead |
Supplier Device Package: | X2-DFN0806-6 |
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The DMN21D1UDA-7B is a type of transistor array, more specifically an insulated-gate bipolar transistor (IGBT) array. It consists of four transistors, the majority of which are DMN21D1 and DMF21D1. Each device can be controlled separately by applying different gate voltages and can be used in applications such as DC-DC and AC-DC converters, motor drivers, and current sensing.
The DMN21D1UDA-7B has two major advantages to other IGBTs. Firstly, the gate threshold voltage of the device is very low, typically 2V, and can be driven by an integrated circuit (IC) even with low power supply voltages. Secondly, it reduces the number of elements needed in the circuit, as all of the necessary devices are integrated on one chip, making it ideal for applications with tight space restrictions.
The DMN21D1UDA-7B has a logic level input stage which allows it to be used with logic signals from circuits such as microcontrollers, FPGAs, and digital logic. This makes it suitable for digital control applications that require strictly on/off signals.
The DMN21D1UDA-7B consists of four N-Channel MOSFETs (NMOS) and one low-voltage depletion switch (LVDT). The NMOS transistors form two power switches, which can individually be controlled by two gate signals; one to open the switch and the other to ground the switch. The LVDT provides an additional logic input, allowing the gate signals to be combined in a way that a single control signal can control all of the transistors in the array. The LVDT can also be used as an overcurrent protection device to prevent excessive current from flowing through the transistors.
The DMN21D1UDA-7B can be used in a range of applications due to its ability to handle high amounts of current. It is often employed in automotive applications, where its ability to handle high voltage transients and its low thermal resistance make it a reliable choice. It is also suitable for DC-DC and AC-DC converters, motor drivers, and current sensing applications.
In summary, the DMN21D1UDA-7B is a type of transistor array which is ideal for applications requiring low power supply voltages and tight spaces. It is well suited for digital control applications, automotive applications, and other applications requiring large amounts of current. With its low gate threshold voltage, logic level input stage, and integrated low voltage depletion switch, the DMN21D1UDA-7B is a reliable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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