DMN2004WK-7 Allicdata Electronics
Allicdata Part #:

DMN2004WKDITR-ND

Manufacturer Part#:

DMN2004WK-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 20V 540MA SC70-3
More Detail: N-Channel 20V 540mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: DMN2004WK-7 datasheetDMN2004WK-7 Datasheet/PDF
Quantity: 39000
Stock 39000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Vgs (Max): ±8V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN2004WK-7 is a type of depletion mode N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It can be used in a wide variety of fields and applications, including analogue switching circuits, voltage level sensing circuits, and in various types of converters. In this article, we will take a look at the working principle of the DMN2004WK-7 and some of its potential applications.

The DMN2004WK-7 is a versatile component made of three layers of silicon-based materials. The bottom layer is the n-type semiconductor material, which is the channel. The middle layer is the oxide layer, which acts as an insulator between the n-type channel and the top layer, which is the metal or metallic contact. The oxide layer is made up of phosphorus-doped silicon dioxide and serves to keep the channel isolated from any external influences, keeping it in its “off” state. When a positive voltage is applied to the metal contact, the phosphorus ions in the oxide layer are attracted to the positive voltage and are “pushed out”, creating an “open” path for current to flow. This is the basis of the working principle of the DMN2004WK-7.

Once current can flow through the channel, the voltage across the gates of the DMN2004WK-7 varies, allowing it to serve as a “switch”, allowing a current to flow from one point to another. This is useful in a variety of applications, such as controlling relays as part of an analogue switching circuit, or as a component used in voltage level sensing circuits. For example, the voltage level sensing circuit is used in systems such as automotive brakes in order to detect when the brakes have been applied and activate the brakes accordingly. The DMN2004WK-7 can be used for this purpose, due to its ability to detect voltage changes accurately and quickly.

The DMN2004WK-7 also finds use in various types of converters, such as DC/DC converters. These converters are used to change the voltage or current of an electrical signal, either stepped up or down. The DMN2004WK-7 is especially useful in these applications, due to its fast switching speeds, which can make the converters more efficient and accurate. The output voltage of a DC/DC converter is dependent on the voltage across the gates of the DMN2004WK-7, and so the DMN2004WK-7 provides an efficient way of controlling the output voltage.

In conclusion, the DMN2004WK-7 is a versatile component, with a wide range of potential uses. Its working principle allows it to effectively control the flow of current, which can be used in various applications, from analogue switching circuits to voltage level sensing circuits and even in DC/DC converters. As such, the DMN2004WK-7 provides a reliable and effective way of controlling the electrical properties of a system.

The specific data is subject to PDF, and the above content is for reference

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