DMN2046U-13

Vgs(th) (Max) @ Id:	1.4V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	760mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	292pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	3.8nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	72 mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.4A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IntroductionThe DMN2046U-13 is a N-channel enhancement mode MOSFET transistor, also called an NMOSFET (negative-channel metal oxide field-effect transistor). It is made up of a source, drain, and gate electrodes, and it relies on an electrostatically induced current to be controlled by the gate. Thanks to its low on resistance and low gate-threshold voltage, the DMN2046U-13 is a great choice for many applications such as RF power applications as well as analog, digital, and switching applications.DMN2046U-13 ApplicationsThe low on resistance and low gate-threshold voltage of the DMN2046U-13 make it an ideal candidate for RF power applications. It has a low drain-source resistance and the gate-threshold voltage can be adjusted by the layout of the MOSFET transistor. This is beneficial for applications where the drain-source voltage must be kept low. As the on resistance increases with increased drain-source voltage, the MOSFET will allow you to keep the drain-source voltage as low as possible while still allowing a high amount of current.The DMN2046U-13 is also great for analog and digital applications due to its high conductance. The high conductance allows the transistor to switch quickly and accurately, which is ideal for digital applications that require a fast switch. Additionally, the low gate-threshold voltage makes it easier to control, making it ideal for analog applications where precise control of current is required.Finally, the low gate-threshold voltage and high on resistance of the DMN2046U-13 also make it a great choice for switching applications as well. When paired with a low voltage, off-state controlled switch, such as a BJT (Bipolar Junction Transistor), the combination allows for quick and reliable switching of currents. In summary, the DMN2046U-13 is an ideal choice for a wide range of applications due to its low on resistance, low gate-threshold voltage, and high conductance.DMN2046U-13 Working PrincipleThe DMN2046U-13 is an NMOSFET transistor, which is composed of a source, drain, and gate electrode. At its core, the transistor relies on the principle of an electrostatically induced current to be controlled by the gate.When the gate voltage is 0V, the NMOSFET transistor is said to be in the off-state, meaning that no current is flowing between the source and the drain. When a positive voltage is applied to the gate electrode, the transistor’s channel region becomes conductive and current can flow between the source and the drain. This is known as the on-state. The amount of current flowing depends on the applied gate voltage and is dependent on the value of the transistor’s on resistance. The higher the gate voltage, the lower the on resistance and the higher the current that can flow through the channel region.ConclusionThe DMN2046U-13 is a high-performance N-channel enhancement mode MOSFET transistor made up of a source, drain, and gate electrodes. It is an ideal choice for RF power applications, as well as digital and analog applications due to its low on resistance, low gate-threshold voltage, and high conductance. The transistor relies on the principle of an electrostatically induced current to be controlled by the gate. When a positive voltage is applied to the gate, current can flow between the source and the drain, depending on the value of the transistor’s on resistance.

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