DMN2016LHAB-7 Allicdata Electronics
Allicdata Part #:

DMN2016LHAB-7DITR-ND

Manufacturer Part#:

DMN2016LHAB-7

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 20V 7.5A 6UDFN
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7...
DataSheet: DMN2016LHAB-7 datasheetDMN2016LHAB-7 Datasheet/PDF
Quantity: 1000
1 +: $ 0.14400
10 +: $ 0.13968
100 +: $ 0.13680
1000 +: $ 0.13392
10000 +: $ 0.12960
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2030-6
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMN2016LHAB-7 is a versatile and powerful DMN2016LHAB series high density, low profile terminal array configuration designed for applications in a wide range of fields. This array package features a Kelvin source connection, a full body diode, and hot-swap overvoltage protection. It is specifically designed to provide reliable high current performance, and it is suitable for high production and extreme temperature applications.

The DMN2016LHAB-7 array consists of two levels of transistors, each with two FETs and two MOSFETs that can be configured in different ways to meet a wide array of application needs. The two FETs are used to provide the drive current that is required for the application. The two MOSFETs are used to provide additional voltage levels, while helping to protect against overvoltage.

The Kelvin source connection of the DMN2016LHAB-7 allows for easy and reliable connection of the transistors and MOSFETs. The Kelvin source connection also allows for a stable connection point that can reduce capacitive loading, helping to ensure a smooth response performance even in extreme temperature conditions.

The full-body diode and hot-swap overvoltage protection of the DMN2016LHAB-7 ensures that all of the components are properly connected and that the array is securely connected to the system. This helps to ensure that the system will remain safe and remain in an operable condition, providing for reliable performance.

The DMN2016LHAB-7 can be used in a number of applications, including industrial and automotive, medical, and aerospace, among others. The array configuration is especially useful for applications that require a tight voltage and current regulation, as well as high performance and reliability.

The DMN2016LHAB-7 array package comes with a variety of configurations and features. These include a range of Kelvin sources, along with a diode-protected current limit feature, allowing the array to protect both the system and the user from voltage overages and current spikes. It also includes a current level control feature that allows the array to be configured for a range of applications, from low-power to high-voltage operations.

The DMN2016LHAB-7 is a highly adaptable array package that provides reliable performance over a wide range of application fields. With its broad range of features, the array enables a wide variety of applications to be designed using the most advanced technologies and components. This makes it a versatile choice for many different types of applications, from industrial to automotive, medical, and aerospace.

The specific data is subject to PDF, and the above content is for reference

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