DMN2114SN-7

Vgs(th) (Max) @ Id:	1.4V @ 1mA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SC-59-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	180pF @ 10V
Vgs (Max):	±12V
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	1.2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

Introduction

The DMN2114SN-7 is an N-channel enhancement mode Field-Effect Transistor (FET). As one of the most common transistor technologies, FETs are used in a wide range of applications, from analog switches, to smart phones and high-end computers. This specific ST FET is specifically tailored for use with various portable systems and applications.

Overview

The DMN2114SN-7 is package in a small SOT-363 outline, which gives it excellent flexibility and power management capabilities. It also has a low on-resistance at a temperature of 25°C which makes it suitable for battery-driven systems. Additionally, this FET can handle up to a maximum power of 2W and has an additional drain-source breakdown voltage of 25v. In terms of grounding, this particular model offers a low source-drain leak current.

Application Fields

Now that we’ve got a general overview of what the DMN2114SN-7 is, let’s go through some of its potential applications.This FET is designed to be used in portable systems, such as notebook computers, notebook PCs, mobile phones, hand-held printers and electronic medical equipment. It can also be used in automotive applications as a switching power device. Furthermore, it is well suited for switching applications, such as low-frequency PFC converters, as well as motorways and power switching applications. Additionally, it can be used in switching power supply controllers.

Working Principle

FETs are basically three-terminal semiconductor devices that use the electric field effect of a channel of carriers to control current flow. This particular model uses an N-channel to control the flow of electrons from source to drain.To summarize the working principle, a positive voltage is applied to the gate, which turns the device on. This causes a “reverse-biased” N-channel in which electrons resonate with the field in the channel, creating what is known as a “saturated” state. This in turn causes a current flow from drain to source.

Conclusion

The DMN2114SN-7 is an N-channel Field Effect Transistor (FET) specifically designed for use with portable systems and applications. With a maximum power of 2W and low on-resistance at 25°C, the DMN2114SN-7 is an excellent choice for power management and switching applications. Its potential applications include notebook computers, mobile phones, hand-held printers, automotive applications and power switching. The device works using an N-channel to control current flow, and has a saturation state that causes current to flow from drain to source.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description