Allicdata Part #: | DMN2020UFCL-7DITR-ND |
Manufacturer Part#: |
DMN2020UFCL-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 9A 6DFN |
More Detail: | N-Channel 20V 9A (Ta) 610mW (Ta) Surface Mount X1-... |
DataSheet: | DMN2020UFCL-7 Datasheet/PDF |
Quantity: | 6000 |
Gate Charge (Qg) (Max) @ Vgs: | 21.5nC @ 4.5V |
Base Part Number: | DMN2020 |
Package / Case: | 6-PowerUFDFN |
Supplier Device Package: | X1-DFN1616-6 (Type E) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 610mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1788pF @ 10V |
Vgs (Max): | ±10V |
Series: | -- |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 9A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Towards the advancement of faster, more reliable and efficient computing technology, there has been an increased focus on the use of Field Effect Transistors (FETs) and Metal–Oxide–Semiconductor Field Effect Transistors (MOSFETs). The DMN2020UFCL-7 is one of the latest developments in the field of FETs which has been designed to offer faster, efficient and reliable operations for a variety of applications.
The DMN2020UFCL-7 is a MOSFET based single FET device which is typically used in a wide range of applications from high-speed communication to industrial control applications. In terms of its design and architecture, the device consists of a drain, source, gate and body elements. The drain and source elements can be used to control the current flowing through the device while the gate element is used to control the electrical field in the device.
In terms of its working principle, the DMN2020UFCL-7 works by first adjusting the voltage applied across the gate and body elements. This causes an electrical field to form between the drain, source and body elements. As the voltage between the elements increases, the electrical field is increased and this results in the current flowing through the device to be increased accordingly.
The DMN2020UFCL-7 offers an excellent combination of high switching speed, high input/output drive and enhanced system performance for a variety of applications. It also offers a low on-resistance which makes it an ideal solution for high current power control and also for high efficiency applications due to its low profile. Moreover, the on-resistance and body diode characteristics of the DMN2020UFCL-7 are also very impressive in comparison to other FETs in the market.
Overall, the DMN2020UFCL-7 is a versatile FET device which can be used in a variety of applications owing to its excellent switching speed, high input/output drive, excellent on-resistance and body diode characteristics. The device has been designed to meet the requirements of a variety of applications and can help to enhance the speed, reliability and efficiency of any system.
The specific data is subject to PDF, and the above content is for reference
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