DMN2016LFG-7

DMN2016LFG-7 is a dual N-Channel enhancement mode Field Effect Transistor (FET) array designed for analog switching applications. The DMN2016LFG-7 array is a versatile device for medium current applications, for both AC and DC signals, with the advantage that it utilizes low-cost manufacturing processes. Hence, DMN2016LFG-7 is widely used in power management, telecommunications, instrumentation and audio/video equipment.

DMN2016LFG-7\'s array structure consists of four N-channel enhancement mode MOSFETs in a single package with complementary symmetry die structure. It features low-on-resistance and reverse drain-source blocking capability for single and phase-shifted MOSFETs, plus an isolated startup gate drive circuit which allows independent toggling of each FET. Each FET in DMN2016LFG-7 has two integrated gate drivers, and two connected source terminals that allow independent toggling of the dual FETs as either two single devices or a fully symmetric device.

Each FET in DMN2016LFG-7 consists of a semiconducting channel between two insulated N-type gate regions and two insulated N-type drain-source regions. The structure of the channel region is determined by the voltage applied to the gate and the drain-source region. When the gate voltage is positive and higher than the drain-source voltage, the current between drain and source increases, since the gate region draws electrons from the channel region and the channel shows an increased number of holes for the current to pass through. On the other hand, when the gate voltage is negative (lower than the drain-source voltage) and drain-source current decreases.

DMN2016LFG-7 has an overload protection feature, to protect from surges and unneeded current from passing though, and an improved on-resistance performance. It also offers full EMC compliance with the highest standards, providing the opportunity to reduce parasitic effects that can lead to noise and disruption.

Thanks to its substrate-isolated silicon die structure, DMN2016LFG-7 uses closed-loop control over wide temperature ranges, with very low power dissipation. DMN2016LFG-7\'s full array design has low on-leakage currents, high voltage breakdown capability, superior thermal stability and low-distortion, making it an ideal choice for a wide range of applications in digital and analog power control circuits.

The DMN2016LFG-7 is an ideal choice for low-voltage switching applications, such as power supplies and lighting, where low-on-resistance is needed. It is suitable for industrial and consumer applications, like air conditioners, ovens, and domestic appliances. Moreover, the array configuration is cost effective and easy to implement, allowing designers to create high-performance circuits with fewer components.

In conclusion, DMN2016LFG-7 is a versatile dual N-channel enhancement mode FET array suited for a range of analog switching applications. It offers reduced on-resistance and reverse drain-source blocking capability. It is low on leakage current, high-voltage breakdown capability and superior thermal stability. Its array configuration allows designers to create cost-effective designs, with fewer components.