Allicdata Part #: | DMN2022UNS-13DITR-ND |
Manufacturer Part#: |
DMN2022UNS-13 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 8V 24V POWERDI3333-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 1... |
DataSheet: | DMN2022UNS-13 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.17334 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 10.7A (Ta) |
Rds On (Max) @ Id, Vgs: | 10.8 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1870pF @ 10V |
Power - Max: | 1.2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerDI3333-8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
DMN2022UNS-13 is a dual high-current N-channel MOSFET module, which is composed of two identical N-channel MOSFETs in a large and tiny package. It provides good static and dynamic switching performance with high ruggedness. This type of MOSFET is suitable for various switching applications and can be applied in a wide range of operating conditions.
The main features and benefits of DMN2022UNS-13 are:
- Low drain-source on-state resistance
- Low input power-loss
- Low capacitance during switching transitions
- High-switching speed
- High resilience to switching and temperature
- High reliability and long life
The application and working principles of DMN2022UNS-13 is applicable in switched-mode power supplies, adjustable DC-DC converters and commercial board-level products. This type of MOSFETs is suitable for switching applications in electronic circuits, providing a good static and dynamic response. They are used to control the current in the circuit, and are usually used in combination with other semiconductor devices, such as bipolar transistors, in order to improve the switching performance. Furthermore, the MOSFETs can be used in synchronous rectification, switching regulators, motor control, uninterruptible power supplies, DC-DC converters and other power controls.
The working principle of DMN2022UNS-13 is to control and switch the current in the circuit. By applying a voltage across the gate and drain, the MOSFET will start conducting, allowing current to flow through the channel. The amount of current that passes through the channel is determined by the applied gate voltage, the resistance of the channel, and the load current. In this way, the MOSFET is capable of controlling current in an electronic circuit. The device is protected from overload by internal current limiting.
The DMN2022UNS-13 has two separate channels, each consisting of its own drain and gate electrodes. The gate and drain can either be connected together, or each controlled independently. This allows for more flexibility in the design. The gate and drain can be used in combination for switching high power loads, as well as for controlling the speed and direction of motor operation. The device can be used for voltage regulators, and for controlling the current in power control circuits.
In summary, the DMN2022UNS-13 is a dual high-current N-channel MOSFET module which is available in a small package and has a wide range of applications. The module provides good static and dynamic switching performance and has a high resistance to switching and temperature. Furthermore, its dual channels allow for more flexibility when it comes to design. The device is used in a variety of applications, such as switched-mode power supplies, adjustable DC-DC converters, synchronous rectification, switching regulators, motor control, uninterruptible power supplies, DC-DC converters and other power controls. By controlling the current in the circuit, it can provide good performance in various applications.
The specific data is subject to PDF, and the above content is for reference
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