| Allicdata Part #: | DMN2300UFB4-7BDITR-ND |
| Manufacturer Part#: |
DMN2300UFB4-7B |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 20V 1.3A 3DFN |
| More Detail: | N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount X... |
| DataSheet: | DMN2300UFB4-7B Datasheet/PDF |
| Quantity: | 230000 |
| 1 +: | $ 0.05000 |
| 10 +: | $ 0.04850 |
| 100 +: | $ 0.04750 |
| 1000 +: | $ 0.04650 |
| 10000 +: | $ 0.04500 |
| Vgs(th) (Max) @ Id: | 950mV @ 250µA |
| Package / Case: | 3-XFDFN |
| Supplier Device Package: | X2-DFN1006-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 64.3pF @ 25V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.6nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 175 mOhm @ 300mA, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.3A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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DMN2300UFB4-7B Application Field and Working Principle
The DMN2300UFB4-7B is a type of Field-effect transistor (FET). It is a single, general-purpose, N-channel MOSFET (Metal Oxide Semiconductor FET). As such, it is a high-speed, logic-level MOSFET primarily used to switch loads such as motors, LEDs, and other digital circuits. As its application field and working principle is generally not known to most people, this article will focus on both of these topics.
Application Field
The DMN2300UFB4-7B is typically used in applications which require fast switching and high efficiency. Its voltage and current ratings allow it to be used in a range of applications that require both high currents and voltages. These types of applications include power switching and motor/lighting control. It is also applicable in audio amplifiers, as it allows for high-frequency performance. Due to its high switching speed, the DMN2300UFB4-7B is also ideal for use in digital circuits and switching functions.
The DMN2300UFB4-7B is mainly used in consumer and commercial electronics, automotive, and industrial applications. Some common consumer electronics in which this MOSFET is used include TV and audio components, computer printers, and gaming consoles. Commercial electronics commonly employing this MOSFET include medical and scientific instruments, as well as defense and aerospace components.
Working Principle
At its core, the DMN2300UFB4-7B is an N-channel FET, which means that it uses an N-type semiconductor material for construction. This N-type semiconductor material allows for the FET to control voltage and current. A small voltage is placed across a gate terminal which creates an electric field that affects the behavior of the material. This electric field causes electrons to flow between the source and the drain terminals, allowing the FET to control the voltage and current. This type of FET is designed to be fast switching, allowing it to quickly turn on and off, allowing for high efficiency applications.
The DMN2300UFB4-7B is also designed to be logic level, meaning that it can be used to control digital signals as opposed to analogue signals. This is due to its high switching speed, allowing it to quickly turn on and off to meet the demands of digital circuits. Additionally, this MOSFET is designed with a low output capacitance, allowing it to reduce power consumption while still providing high switching speed.
Conclusion
The DMN2300UFB4-7B is a type of Field-effect transistor that is primarily used for fast switching applications. Its high efficiency and low output capacitance makes it well suited for use in digital circuits, as well as in motor control, lighting control, and audio amplifiers. It is widely used in consumer and commercial electronics, automotive, and industrial applications. The DMN2300UFB4-7B utilizes an N-type semiconductor material to create an electric field between the source and drain terminals, allowing it to control voltage and current.
The specific data is subject to PDF, and the above content is for reference
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DMN2300UFB4-7B Datasheet/PDF