DMN2015UFDF-13

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The DMN2015UFDF-13 is a three-phase, non-isolated, MOSFET single-channel power module. As a low-voltage, high-side switch, it is designed for the application field in variable frequency drive systems (VFDs) with power up to 300W. The DMN2015UFDF-13 features N-channel MOSFETs (metal-oxide-semiconductor field-effect transistors) in the output stage. This type of power switch provides vastly superior performance characteristics compared to its bipolar junction transistor (BJT) equivalent, for example, in terms of fast switching, efficiency, heat dissipation, and reliabbility. In other words, the DMN2015UFDF-13 is designed to allow for greater control of loads and a higher frequency response rate.

The DMN2015UFDF-13 has a working principle based on the depletion mode of N-channel MOSFET operation. In this mode, the gate voltage must be below the source voltage for the MOSFET to be turned “off”. Conversely, if the gate voltage is increased above the source voltage, the MOSFET switch is turned “on”. When the gate of the DMN2015UFDF-13 is activated, the power switches in the output stage conduct in order to enable currents of up to 11 A. The device also features a soft start operation which ensures smooth operation, as well as short-circuit protection, in order to prevent damage to the device.

The DMN2015UFDF-13 is equipped with advanced features like a temperature sensing element which helps to protect the MOSFET from overheating. This thermal protection is based on a PTC (positive temperature coefficient) element which measures the temperature of the devices and acts as a ground fault detector. The DMN2015UFDF-13 also has built-in diagnostics for fault detection and an inductor current sensing circuit for current limiting protection. To further increase the safety of operation, the device also features a discharge circuit for the removal of stored electric energy.

In summary, the DMN2015UFDF-13 is a non-isolated, MOSFET single-channel power module designed for the application field in variable frequency drive systems (VFDs) with power up to 300W. The device features N-channel MOSFETs in the output stage, control circuits, and built-in features such as temperature sensing, short-circuit protection and fault detection. With its higher efficiency and superior performance compared to BJTs, the DMN2015UFDF-13 provides reliable and safe operation for designs in need of power up to 300W.

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