Allicdata Part #: | DMN2005LP4KDITR-ND |
Manufacturer Part#: |
DMN2005LP4K-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 200MA 3-DFN |
More Detail: | N-Channel 20V 200mA (Ta) 400mW (Ta) Surface Mount ... |
DataSheet: | DMN2005LP4K-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 900mV @ 100µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | X2-DFN1006-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 41pF @ 3V |
Vgs (Max): | ±10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 10mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN2005LP4KE-7 is a single MOSFET, which belongs to the FET family of transistors. It has a very useful application field and working principle when utilized properly.
Application Field
The DMN2005LP4K-7 MOSFET has a number of different applications that suit its parameters and specifications. It is an ideal choice when needing to switch power on and off, since static dissipation is low and power consumption is minimized. It also has fast switching capabilities, meaning it can be used for analog switching or for applications where timing is critical. This transistor can be used as a driver for DC motors, used as controlled rectifiers, radio frequency switching, power line switching, and used in linear regulators.
Working Principle
The DMN2005LP4K-7 MOSFET operates on a simple principle: when a voltage source is applied to the gate, it is enabled and current can flow through the drain to source. The DMN2005LP4K-7 transistor has a very low on/off threshold voltage, meaning that even a very small voltage will be able to activate it, and thus start the process.
The DMN2005LP4K-7 has a low on resistance, meaning that it has an excellent ability to conduct current. This is due to the use of a silicon substrate and the non-conductive silicon dioxide (SiO2) gate oxide layer that forms the gate insulator. A fully insulated gate is created by adding a heavily doped region beneath the oxide layer, called the gate electrode. As the operating voltage across the drain and source terminals is applied to the transistor, the electrons are attracted to the gate, allowing current to flow from the drain to the source.
When the source and gate voltages are reversed, the internal gate stays charged and no current flows. In this way, the transistor is turned off, and no current can flow through the drain to source terminals.
Overall, the DMN2005LP4K-7 is a useful transistor for its fast switching capability, low on resistance and low static power consumption. It can be used in a variety of applications, from DC motor drivers to linear regulators, where switching speeds and minimized power consumption is critical.
The specific data is subject to PDF, and the above content is for reference
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