DMN2215UDM-7 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 250µA
Base Part Number:	DMN2215UDM
Supplier Device Package:	SOT-26
Package / Case:	SOT-23-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	650mW
Input Capacitance (Ciss) (Max) @ Vds:	188pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:	--
Series:	--
Rds On (Max) @ Id, Vgs:	100 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2A
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IntroductionThe DMN2215UDM-7 is a unique type of transistor array that contains a combination of field effect transistors (FETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). It is designed primarily for low-voltage, high-current applications in audio, motor control, and automotive applications. The DMN2215UDM-7 is suitable for a wide range of audio applications due to its low on-resistance and symmetrical switch characteristics. In this article, we will discuss the application field of the DMN2215UDM-7 and the working principle behind its functionality.Application fieldThe DMN2215UDM-7 is ideal for applications that require low operating voltage and high current. It is designed for use in audio, motor control, and automotive applications. The DMN2215UDM-7 is also suitable for a wide range of audio applications because of its low on-resistance and symmetrical switch characteristics. These features give the DMN2215UDM-7 the ability to provide high-performance audio signal buffering and switching.In addition, the DMN2215UDM-7 can be used in other applications such as power electronics, DC/DC converters, and general switching applications. Its low on-resistance enables it to handle large amounts of current with minimal resistance, making it suitable for various high-power applications. Other applications include providing isolation for high voltage signals and providing gate protection for MOSFETs, IGBTs, and BJTs.Working principleThe DMN2215UDM-7 is designed to be a symmetrical field effect transistor (FET) array, with eight channels each consisting of one N-channel MOSFET and one P-channel MOSFET. These devices have a common source, drain and gate that are connected together through the integrated circuit’s on-die layout. This enables the device to be used for various ‘split’ or ‘sharing’ applications, such as providing separate N-channel and P-channel outputs.When using the DMN2215UDM-7, the gate of each FET is connected to an output (either ‘low’ or ‘high’), and the inputs are connected to the common source and drains. A logic level voltage can then be applied to the gate of the desired FET to activate it, and the device will then switch between a low resistance state and a high resistance state.ConclusionThe DMN2215UDM-7 is a unique type of transistor array that is designed for low-voltage, high-current applications in audio, motor control, and automotive applications. Its low on-resistance and symmetric switch characteristics make it ideal for a variety of audio applications, and its design enables it to be used in other applications such as providing isolation for high voltage signals and providing gate protection for MOSFETs, IGBTs and BJTs. The DMN2215UDM-7 is composed of eight channels, each consisting of one N-channel MOSFET and one P-channel MOSFET, and it utilizes an on-die layout to connect the common source and drain together. To use the device, a logic level voltage is applied to the gate of the desired FET, and the device will then switch between a low and a high resistance state.

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