Allicdata Part #: | DMN26D0UDJ-7DITR-ND |
Manufacturer Part#: |
DMN26D0UDJ-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 20V 0.24A SOT963 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 240mA 300mW Su... |
DataSheet: | DMN26D0UDJ-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 240mA |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.05V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14.1pF @ 15V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-963 |
Supplier Device Package: | SOT-963 |
Base Part Number: | DMN26D0UDJ |
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The DMN26D0UDJ-7 is a MOSFET array ( Metal Oxide Semiconductor Field Effect Transistor ) manufactured by Mitsubishi Electric. It\'s an array of eight semiconductor FETs (Field Effect Transistors) that are designed to be used in integrated circuits. They are designed to be used in automotive fuel injection systems, motor control applications, and various other applications. The DMN26D0UDJ-7 is a lead-less surface mount device (SMT) package, and it is available in various sizes, ranging from 7x7mm to 13x13mm.
The DMN26D0UDJ-7 is an array of eight N-channel MOSFETs, each with its own gate, drain, and source. Each MOSFET has a maximum drain-source voltage of 30V, a maximum gate-drain voltage of ± 20V, and a drain-source current of 1A. It is also capable of withstanding high pulsed currents. The DMN26D0UDJ-7 is manufactured using MOS (Metal Oxide Semiconductor) technology, which enables it to switch quickly and with low power consumption.
The working principle of the DMN26D0UDJ-7 is based on field effect transistors. Every MOSFET in the DMN26D0UDJ-7 has its own gate, drain and source. As the gate voltage increases, the resistance between the drain and the source decreases. This allows for current to flow between the drain and the source. By controlling the gate voltage, the current flow can be adjusted accordingly.
The DMN26D0UDJ-7 can be used in a variety of applications, including automotive fuel injection systems, motor control applications, and other MOSFET-related applications.
In automotive fuel injection systems, the DMN26D0UDJ-7 is used to control the flow of fuel to the engine. It is responsible for controlling the fuel injectors and the amount of fuel being delivered to the engine.
In motor control applications, the DMN26D0UDJ-7 is used to control the speed and direction of DC motors. It is responsible for controlling the amount of current being delivered to the motor, allowing the user to control the speed and direction of the motor.
The DMN26D0UDJ-7 can also be used in other MOSFET-related applications, such as switching power supplies, regulated power supplies, and so on.
In conclusion, the DMN26D0UDJ-7 is a MOSFET array that is used in a variety of applications, including automotive fuel injection systems, motor control applications, and other MOSFET-related applications. It is based on field effect transistors and has a maximum drain-source voltage of 30V, a maximum gate-drain voltage of ±20V, and a drain-source current of 1A.
The specific data is subject to PDF, and the above content is for reference
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