DMN2990UDJ-7

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​The DMN2990UDJ-7 is a dual MOSFETs N-channel array transistor with two identical N-channel enhancement mode DMN2990UDJ MOSFETs in a single package, thus allowing two transistor devices to be replaced with one array. It provides load protection, EMI suppression and circuit protection functions in low-power applications, as well as a wide variety of other uses.

The DMN2990UDJ-7 is designed for applications such as MOSFET switching or general purpose MOSFET applications that require low conduction losses and low gate capacitance. It can be used in power supply design, power management, motor driver circuits, portable consumer and automotive electronics, among others.

The array transistor has an integrated gate-source circuit that provides protected bi-directional current flow with a low voltage drop. It also has a diode protection system to prevent inductive voltage transients due to switching of inductive loads. The array is designed for protection against surge voltages, inrush currents and transients, reverse voltage protection. It can also be used as an EMI suppressor.

The DMN2990UDJ-7 has an integrated dual MOSFET array with two 220 mA rated N-channel MOSFETs. The low on-state resistance, RDS(on), ensures low power losses and wide current capability. The array is designed with reverse current protection and a low gate capacitance, which results in low switching times and improved noise immunity. The array also provides a wide variety of protection functions, such as voltage suppression, over-current protection, and reverse-polarity protection.

The DMN2990UDJ-7 features an integrated over-current protection circuit, which provides a reliable overload protection for output voltage lines. It can be used together with microcontrollers and other logic controllers to provide reliable and efficient protection for system loads. The integrated MOSFET array also provides an ideal solution for noise suppression in applications where the audible noise generated by switching transients is undesired.

The operating temperature range of the DMN2990UDJ-7 is -55°C to 150°C and the allowable power dissipation is 550mW. The maximum voltage across the device can be 2.2 V to 18 V and the maximum current is 6 A. The array has a maximum permissible continuous drain current of 220 mA and a maximum permissible drain-source voltage of 20 V.

The DMN2990UDJ-7 can be used in a variety of applications. It can be used for load protection in low-power applications, EMI suppression, and circuit protection. It can also be used for motor drivers, power conversion and distribution, low power motor control circuits, bi-directional current flow with a low voltage drop, noise shielding and suppression, and reverse voltage protection.

In summary, the DMN2990UDJ-7 array transistor is an ideal solution for low power applications. It can be used in a wide range of applications thanks to its protection functions and high current rating, and its low gate capacitance ensures low switching times and improved noise immunity. It also offers load protection, EMI suppression, circuit protection, and reverse voltage protection.

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