Allicdata Part #: | DMT10H010LCTDI-ND |
Manufacturer Part#: |
DMT10H010LCT |
Price: | $ 1.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V TO220AB |
More Detail: | N-Channel 100V 98A (Tc) 2W (Ta), 139W (Tc) Through... |
DataSheet: | DMT10H010LCT Datasheet/PDF |
Quantity: | 94 |
1 +: | $ 1.16550 |
50 +: | $ 0.94185 |
100 +: | $ 0.84767 |
500 +: | $ 0.65930 |
1000 +: | $ 0.54627 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 139W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 98A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The DMT10H010LCT is an N-channel enhancement-mode power MOSFET that is mainly used in switching and power conversion applications. It has a high power handling capability and excellent protection performance, making it a great option for a variety of applications.
The device is designed with a low resistance drain-source channel and low gate capacitance, which enable it to have fast switching performance, low input capacitance, and high dv/dt capability. Additionally, it has incredibly low gate threshold voltage (Vgs) of 4V, making it a suitable choice for a wide range of applications.
The DMT10H010LCT is suitable for applications such as DC-DC converters, power supplies, motor control systems and automotive power distribution systems. It can also be used in a variety of other applications due to its fast switching performance, low on-resistance, and low reverse transfer capacitance characteristics.
The DMT10H010LCT is available in a lead-free package that is optimized for maximum heat transfer, helping to ensure that the device remains cool and reliable even under high current loads.
The device works on the principle of voltage-controlled conduction or field-effect transistor. It is composed of a channel of n-type semiconductor material sandwiched between two heads of p-type material, called the source and the drain. The gate terminal is composed of an insulated gate material.
When a positive voltage is applied to the gate terminal, an electric field is generated which causes a shift in the conductive channel, turning the device “on”. When the voltage at the gate is reduced, the conductive channel is shifted back, turning the device “off”.
The DMT10H010LCT has the typical benefit of low on-resistance in its ‘on-state’ and low gate charge for fast switching operation. This makes it an ideal choice for high current applications, providing both high power and efficiency in the process.
The device also offers ESD (electrostatic discharge) protection in both its gate-source and gate-body terminals, which helps to protect it from damage caused by sudden and heavy electric discharges. This provides further reliability and enhances the device’s durability.
The DMT10H010LCT is an ideal choice for a variety of power conversion and switching applications. Its low protection voltage, low input capacitance, and fast switching performance make it an extremely versatile device that can be used in a wide range of applications. Its advanced protection capability and optimized heat transfer properties also make it a reliable choice for powering a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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