Allicdata Part #: | DMT10H010LK3-13DITR-ND |
Manufacturer Part#: |
DMT10H010LK3-13 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 68.8A TO252 |
More Detail: | N-Channel 100V 68.8A (Tc) 3W (Ta) Surface Mount TO... |
DataSheet: | DMT10H010LK3-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.35501 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2592pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 53.7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 68.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT10H010LK3-13 is a surface-mount Field-Effect Transistor (FET) from one of the most popular semiconductor device companies, Toshiba. As a surface-mount device, the DMT10H010LK3-13 is a perfect choice for operations that require custom-made boards and circuitry in limited space. It is a N-channel enhancement-mode Silicon Gate MOSFET, designed for applications such as switching power converters, motor drives, and power supplies. With its high-frequency operation capability and low on-resistance, it provides robust performance in many high-performance applications.
The DMT10H010LK3-13 has an impressive array of features. It uses a standard MOSFET structure, with a vertical structure involving a single N-type MOSFET and two desirable gates, providing a high efficiency and low on-resistance values. The device has a maximum drain current of 0.8 A, maximum drain-source breakdown voltage of 100V, and a gate-source threshold voltage of 3V. It has a fast switching speed, allowing for improved circuit performance, and operates from a single supply voltage of 9V to 18V.
The DMT10H010LK3-13 has a wide range of applications because of its versatility. It is ideal for design projects requiring the conversion of alternating current (AC) to direct current (DC). It can be used in switch-mode DC-DC converters, motor drives, and power supplies. It can also be used in switching applications that require fast switching at low voltage and low on-resistance. With its low input capacitance and fast switching speed, the device is suitable to use in high-speed digital circuits such as VHF and UHF amplifiers.
The working principle of a surface-mount FET such as the DMT10H010LK3-13 is relatively simple and easy to understand. During operation, the device acts as an electronic switch, allowing a defined amount of current to flow between the two gates when the Gate-Source voltage (Vgs) exceeds the threshold voltage (Vth). This enables the device to control the amount of current passing through the field-effect transistor, and consequently, the output voltage. In effect, it acts as a switch, controlling the on-off state of the current flow.
The DMT10H010LK3-13 surface-mount FET provides robust performance for many applications. Its fast switching speed and low on-resistance properties make it the perfect choice for design projects requiring conversion of AC to DC or other complex switching applications. With its proven performance, it provides designers with the versatility they need to create custom-made boards and circuitry.
The specific data is subject to PDF, and the above content is for reference
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