Allicdata Part #: | DMT10H015LPS-13DITR-ND |
Manufacturer Part#: |
DMT10H015LPS-13 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 7.3A |
More Detail: | N-Channel 100V 7.3A (Ta), 44A (Tc) 1.3W (Ta), 46W ... |
DataSheet: | DMT10H015LPS-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.30733 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta), 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1871pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Ta), 44A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT10H015LPS-13 is a single N-Channel Power MOSFET from Sunlord Electronics Co., Ltd. It is a type of transistor that has gained popularity for its wide range of applications, such as power switching, low-loss converters, motor control, and so on. This article will discuss the applications and the underlying working principles of this device.
The DMT 10H 015LPS-13 features a low on-resistance that allows efficient, low-loss power conversion. It also has low capacitance, which minimizes switching times, making this device ideal for use in high-speed switching applications. The device is also rated for a maximum drain-source voltage of 30V and a maximum drain current of 15A (Single Pulse).
The applications of the DMT 10H 015LPS-13 are vast. Due to its low on-resistance, it can be used for power switching at high speeds, making it a great option for motor control, and other low-loss power conversion applications. It is also widely used in logic circuits, with its low-power operation and robust design providing reliable performance. The device can also be used in low-dynamic impedance amplification circuits, such as amplifiers, power converters, and so on. As a result, the device finds a variety of applications in a range of fields.
In terms of its underlying working principles, the DMT 10H 015LPS-13 is a metal-oxide-semiconductor field-effect transistor (MOSFET). It uses insulated-gate field-effect technology to regulate current flow. The device has a gate terminal that is used to control the amount of current that passes through the device. When the gate terminal is activated, the device conducts current, whereas when it is not activated, the device does not conduct current. The gate terminal is also connected to a voltage source, allowing it to control the amount of current that passes through the device.
The device also features a source terminal and a drain terminal. When the gate terminal is activated, current from the source terminal flows through to the drain terminal. The gate terminal, along with the other components of the device, helps to control the amount of current flowing through the device. Additionally, the device has a channel between its source and drain terminals. This channel helps in controlling the flow of electrons when the gate terminal is activated.
To sum it up, the DMT 10H 015LPS-13 is a single N-Channel Power MOSFET from Sunlord Electronics Co., Ltd. It is used for a wide range of applications, including low-loss power conversion and motor control. It has a low on-resistance and low capacitance, which makes it ideal for high-speed switching applications. The underlying working principles involve a metal-oxide-semiconductor field-effect transistor, which regulates current flow by controlling the amount of current that passes through the device.
The specific data is subject to PDF, and the above content is for reference
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