DMT10H010LPS-13

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerDI5060-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.2W (Ta), 139W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3000pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	71nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9.4A (Ta), 98A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMT10H010LPS-13 is a single-gate low-frequency field-effect transistor (FET) with a Low Gate Charge (Qg=8.9nC specified at 200mA). It is based on the symmetrical DMOS technology to provide high-voltage operation with improved immunity to latch-up compared to conventional single MOSFETs. The device is available in the standard TO-220 package and is suitable for a variety of applications, particularly in computer and automotive power supplies.
In a basic FET structure, a junction is formed between the source and drain terminals in order to form a field-effect region, which is the area in which the transistor operates. The gate terminal is insulated from the flowing current, but is still able to control the flow of the current. This control is achieved by manipulating the electric field, which affects the current flow by changing the conductivity of the field-effect region. The electric field is generated by applying a voltage to the gate terminal.
The DMT10H010LPS-13 transistor has a maximum drain source voltage of 200V, a drain current of 1A, and a gate source voltage of 10V. The device is also capable of providing low gate charge at 200mA, meaning that it requires very little power to operate. This makes it ideal for applications requiring low power consumption, such as computers and automotive power supplies.
The working principle of the device is that when a voltage is applied to the gate terminal, an electric field is created. This field affects the conductivity of the channel between the source and drain terminals, allowing current to flow through the device. The current will flow until the voltage reaches a certain threshold, at which point the channel becomes more resistant to current, limiting the flow of current. In this way, the device is able to act as a switch, allowing or preventing the flow of current through the channel.
The DMT10H010LPS-13 is an ideal choice for applications requiring low gate charge and low power consumption. Its high-voltage operation and immunity to latch-up make it particularly well suited for use in computer and automotive power supplies. With its low gate charge, the device is able to maintain its current in a very efficient manner, reducing power consumption and providing improved performance.

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