Allicdata Part #: | DMT10H015LSS-13DITR-ND |
Manufacturer Part#: |
DMT10H015LSS-13 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 8.3A |
More Detail: | N-Channel 100V 8.3A (Ta) 1.2W (Ta) Surface Mount 8... |
DataSheet: | DMT10H015LSS-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.31240 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1871pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMT10H015LSS-13 is a kind of single-transistor field-effect transistor (FET) in the category of PowerMOSFETs. It is widely used in the circuitry design for power supply and power management in high-end products such as mobile phones, game consoles, compact digital cameras and satellite TV receivers. The DMT10H015LSS-13 is also used in many other devices, as it is a universal type of transistor with high power standards in both switching and protection.
The DMT10H015LSS-13 FET is constructed of three layers of semiconductor material. The three layers include the source, the drain and the gate. The source and the drain are the two terminals of the transistor. These are connected through the semiconductor material, with the gate controlling how current passes between them. The DMT10H015LSS-13 FET also typically has a low RDS(on), which is the amount of resistance under the gate. This low RDS allows for higher power transfer rates through the transistor, thus making the DMT10H015LSS-13 a suitable choice for many applications.
The working principle of the DMT10H015LSS-13 FET is relatively simple. The source terminal acts as the entrance port of the current. When its internal gate is activated by a signal, the current will flow between the source and the drain. The signal to gate determines the amount of current that flows between the source and the drain. In the words of power mosfet designer, the drain and the source essentially operate in an opposite manner to that of an open switch. When the gate signal is turned on, the drain will become the entrance port of the current and the source will become the exit port. This creates an inverted polarity between both transistors, which in turn decreases the power dissipation and increases the efficiency of the DMT10H015LSS-13 FET.
The DMT10H015LSS-13 FET is used in a wide range of circuitry design applications. It is used primarily in the power management and power supply of products such as mobile phones, game consoles, compact digital cameras and satellite TV receivers. Its low RDS(on) makes it suitable for handling higher currents than other transistors and also helps reduce energy consumption and increase efficiency. Some of the applications it can be used in are: Automatic Test Equipment, Carpet Cleaners, Industrial Control Systems, Low Frequency Transceivers, Motor Drives, Power Supplies and Solar Array Configurations.
The DMT10H015LSS-13 greatly increases the efficiency of a large variety of electronic devices. Its low RDS(on) allows it to switch between source and drain quickly and with greater energy efficiency. Furthermore, its inverting polarity ensures that the current doesn’t dissipate and is optimally used. This feature helps contribute towards a reduced power consumption. DMT10H015LSS-13 is, therefore, one of the most preferred choices for engineering power and protection circuitry designs.
The specific data is subject to PDF, and the above content is for reference
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