
Allicdata Part #: | DMT10H010SPS-13DITR-ND |
Manufacturer Part#: |
DMT10H010SPS-13 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFETN-CH 100VPOWERDI5060-8 |
More Detail: | N-Channel 100V 10.7A (Ta), 113A (Tc) 1.2W (Ta) Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.34486 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4.468nF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.7A (Ta), 113A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT10H010SPS-13 is a single N-Channel MOSFET, which is often used as a switch or amplifier in various applications. This type of MOSFET has an insulated gate and a low on-resistance (Rs).
The DMT10H010SPS-13 is typically used in electronic devices, such as high-speed video, audio, and imaging systems. It is also used in a variety of automotive, telecommunications, and consumer applications. For example, it can be used for controlling board-level power switching, managing power distribution, providing load protection and driving automotive relays.
The DMT10H010SPS-13 is a P-Channel MOSFET (or PMOS), meaning that it has an insulated gate that can be charged with a positive voltage from the source to the drain. This creates an inversion channel in order for the current to flow. The advantage of using a PMOS device over an NMOS device is that the gates can be driven with higher voltages, which allows for larger power dissipation.
The DMT10H010SPS-13 can be used in many applications with different operating voltages, including up to 100V, and can handle up to 28V of continuous current. It is also highly efficient, with a typical Rdson of 0.63 mΩ and a Gate-Source voltage range of -10V to +30V. In addition, it has low gate-to-drain capacitance with a maximum of 4pF and a high static drain-to-source on resistance of 33Ω.
The operating principle of the DMT10H010SPS-13 is relatively straightforward. When an appropriate voltage is applied to the gate (Vgs), the PMOS device is driven into saturation, allowing current to flow from the drain (D) to the source (S). Since the gate voltage is higher than the source voltage, this creates a channel for the current to pass through. This device can also be used in an inverting configuration by reverse biasing the gate, thereby creating a channel from the source to the drain. This can be useful for controlling high-side devices such as relays or power switches.
The DMT10H010SPS-13 is a versatile MOSFET that can be used in a variety of applications due to its low on-resistance, high current handling capability, and low gate-to-drain capacitance. Its wide operating voltage range and high efficiency make it a great choice for high-speed video, audio, and imaging systems, as well as a range of automotive, telecommunications, and consumer applications. Its insulated gate and low on-resistance make it easy to use and help ensure reliable operation.
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