DMT10H014LSS-13

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The DMT10H014LSS-13 is a type of N-channel enhancement mode MOSFET, formulated specifically for linear operation. It was designed and developed to serve a wide range of applications, and can operate at high levels of efficiency while handling large loads.

In the majority of applications, the DMT10H014LSS-13 is employed as a power switch. It is a well-suited choice for this job due to its low on-resistance, low gate charge and low input capacitance. On account of its versatile design, it can be used in an almost infinite variety of applications and use cases, from motor control to switching power supplies.

Furthermore, the device is an excellent choice for temporary storage of electrical energy due to its low switching loss and excellent RF reliability. This makes it suitable for a variety of high power applications, such as automotive systems and telecommunications.

The DMT10H014LSS-13 is a reliable and dependable device, with a wide range of features that make it the optimal solution in a range of applications. The device features low dynamic resistance, meaning that it can handle large loads at higher levels of efficiency. This is complemented by its low input and output capacitance, which help to mitigate switching losses.

This device also features a gate-source/drain charge of 22nC, helping to ensure fast switching times and improve the device’s overall performance. Its maximum VGS(gate-source voltage) rating is 30V, and its total gate charge is 22 nC, providing optimal performance.

In addition to its impressive feature set, the DMT10H014LSS-13 is a highly reliable device, with a production line yield of more than 99.5%. Its drain-to-source breakdown voltage is 30V and its drain-to-source avalanche rating is 28V. It also has a drain current rating of 40A and a gate-source voltage rating of 30V.

The working principle behind the DMT10H014LSS-13 begins with a simple source-gate voltage applied to the device. This voltage alters the electron transport channel between the source and the drain, and enables current to flow. When the gate-source voltage is reversed, the device becomes cut-off and no current will flow. In theory, the device is able to function as either an enhancement-mode or depletion-mode device.

In conclusion, the DMT10H014LSS-13 is a versatile and reliable N-channel enhancement mode MOSFET. Due to its low on-resistance, low gate charge and low input capacitance, the device is an excellent choice for a wide range of applications, from motor control to switching powers supplies. Its impressive feature set makes it the optimal choice for high power applications, such as automotive systems and telecommunications. It is an efficient device, with a production line yield of more than 99.5%, and it has a drain-to-source breakdown voltage of 30V and a drain-to-source avalanche rating of 28V. The ease with which the device can be manipulated and its reliable performance make it an ideal choice for a wide range of applications.

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