Allicdata Part #: | DMT10H025SSS-13DITR-ND |
Manufacturer Part#: |
DMT10H025SSS-13 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFETN-CHAN 100V SO-8 |
More Detail: | N-Channel 100V 7.4A (Ta) 1.4W (Ta) Surface Mount 8... |
DataSheet: | DMT10H025SSS-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.16283 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1544pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMT10H025SSS-13 is a type of MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor) that falls into the category of single MOSFETs. It is specifically a N–channel power MOSFET with a 25V drain–source voltage, a maximum drain–source current of 180A, an on–resistance of 0.016 Ω and a single dPackage of TO–3P. Its application fields and working principles are discussed in this paper.
Application Field of DMT10H025SSS-13
The DMT10H025SSS-13 MOSFET has a wide array of applications. It is most suitable for use in a number of areas, including renewable energy sources such as wind solar power systems, DC/AC inverters, power supplies, switching power supply, magnetic power supplies, motor drives and more. It is ideal for use in circuits that require high current and voltage, such as circuits that require driver. In addition, it can also be used in circuits with 85V drain–source voltage and low on–resistance.
Working Principle of DMT10H025SSS-13
The DMT10H025SSS-13 MOSFET is a N–channel power MOSFET, which is able to control the current flow between two electrical terminals (source and drain) using the voltage that is applied between the gate and the source. It works by using an electric field to control the conductivity of a semiconductor material, which is necessary to ensure that the current flows in the desired direction. When a voltage is applied to the gate, it causes the oxide layer that surrounds the gate to be polarized, inducing a charge into the channel of MOSFET, which in turn allows current to flow from the source to the drain. When the voltage is removed, the charge stored in the channel dissipates and the current does not flow through the MOSFET.
Conclusion
In conclusion, the DMT10H025SSS-13 is a type of single MOSFET and is ideal for use in renewable energy sources, DC/AC inverters and motor drives due to its ability to handle high current and voltage with a low on–resistance. It works by using an electric field to control the conductivity of a semiconductor material, allowing current to flow when the voltage is applied and dissipating the charge when the voltage is removed.
The specific data is subject to PDF, and the above content is for reference
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